InSb Quantum Devices: All-electrically Controlled Electron Spins. (ACES)

InSb 量子器件：全电控制电子自旋。

• 批准号: EP/L012995/1
• 负责人: Phil Buckle
• 金额: $ 61.29万
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FL012995%2F1
• 关键词: InSb; Quantum; Devices; electrically; Controlled

Despite challenges with decoherence, solid state spin qubits remain one of the best practical implementations of quantum device architectures that exploit quantum state entanglement, owing to the possibility of incorporation into existing electronics technology. 'Physics for Quantum Technologies' was acknowledged in a recent EPSRC Physics Grand Challenge survey as the most overwhelmingly recognised challenge in the physical sciences. "New materials for solid-state quantum electronics need to be developed" was a highlighted high level requirement. Physics for Quantum Technology was also acknowledged as having the highest potential UK economic impact should the UK establish an intellectual advantage.All electrical control of single electron spins in a practical semiconductor device would be a major breakthrough which the UK is in a unique position to achieve owing to the world lead it has in the strong spin-orbit InSb/AlInSb semiconductor material system. There are a number of key stepping stones to achieving the end goal of single electron manipulation in gate confined quantum structures. We propose to address the material growth challenges of highly mismatched InSb/InAlSb epitaxy on GaAs and Si, and achieve world record carrier mobilities and associated ballistic length, and develop device capability for advanced measurement and exploitation by the wider UK scientific community.Through a series of standard quantum transport devices, this work will ultimately demonstrate the potential for electron spin manipulation (and therefore individual qubit addressing) by the spatial translation of single electrons in complex multiple gate field effect devices, using the Rashba spin-orbit coupling to enable local spin state control.

尽管存在退相干的挑战，但固态自旋量子位仍然是利用量子态纠缠的量子器件架构的最佳实用实现之一，因为它有可能融入现有的电子技术。 EPSRC 最近的一项物理大挑战调查将“量子技术物理学”视为物理科学领域最受认可的挑战。 “需要开发固态量子电子学新材料”是一个突出的高水平要求。如果英国建立智力优势，量子技术物理也被认为对英国经济具有最高的潜在影响。实用半导体器件中单电子自旋的所有电气控制将是一项重大突破，英国在实现这一突破方面处于独特的地位，因为英国在强自旋轨道 InSb/AlInSb 半导体材料系统方面处于世界领先地位。要实现门限域量子结构中单电子操控的最终目标，有许多关键的垫脚石。我们建议解决 GaAs 和 Si 上高度失配的 InSb/InAlSb 外延的材料生长挑战，并实现载流子迁移率和相关弹道长度的世界纪录，并开发设备能力，以供更广泛的英国科学界进行高级测量和开发。通过一系列标准量子传输设备，这项工作最终将展示通过单电子的空间平移进行电子自旋操纵（以及单个量子位寻址）的潜力 在复杂的多栅极场效应器件中，使用 Rashba 自旋轨道耦合来实现局部自旋状态控制。