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Manufacturing of nano-engineered III-nitride semiconductors

纳米工程III族氮化物半导体的制造

基本信息

批准号：
EP/M015181/1
负责人：
Philip Shields
金额：
$ 306.05万
依托单位：
University of Bath
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2015
资助国家：
英国
起止时间：
2015 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FM015181%2F1
关键词：
Manufacturing nano engineered III nitride

项目摘要

The goal of this proposal is to develop advanced fabrication processes for Gallium Nitride (GaN) and related materials (AlN and InN), collectively the III-Nitrides, for the 21st Century manufacturing industries. The III-Nitrides are functional materials that underpin the emerging global solid state lighting and power electronics industries. But their properties enable far wider applications: solar energy conversion by photovoltaic effect and water splitting, water purification, sensing by photonic and piezoelectric effects and in non-linear optics. Many applications of these functions of the III-Nitrides are enhanced, even enabled by creating three dimensional (3D) nanostructures. As such, the particular focus of the proposed research is to develop and nanostructuring processes on a manufacturing scale and to unlock the potential of these properties of the III-Nitride semiconductors in a range of innovative materials and devices. The research will address and resolve 1) the need of industry to be able to scale-up laboratory-based results based on individual piece or wafer fragments to batches of wafers of up to 6 inches in diameter, 2) the need to be able to design devices that are robust with the manufacturing tolerances, and 3) the need to rapidly characterise the devices to increase packaging yield. Potential commercial exploitation of the manufacturing processes and innovative materials and devices will be aided and led by the applicants' company partners. The programme of research opens with developing the core capability of wafer-scale (up to 6 inch) nanopatterning by nanoimprint lithography and the newly developed technique of Displacement Talbot Lithography, a potentially disruptive technology for generating nanostructures. These lithographic techniques will then be integrated with additive and subtractive processes to form 3D nanostructures across whole wafers. In a major application, the developed nanofabrication techniques will be used in developing manufacturing processes for the growth by metal organic vapour phase epitaxy (MOVPE) of non-polar and semi-polar GaN templates to address the persistent problem of the quantum confined Stark effect limiting the efficiency of light emitting diodes (LEDs) and GaN based laser diodes. The computer aided design method known as Designing Centering will be developed for process optimisation to maximise the yield of nanostructured devices (initially LEDs). Another activity will be to explore the use of electron beam and optical techniques, which are capable of characterising materials and devices on the deeply sub-micron scale, as production tools for screening materials and part-processed devices.The combination of wafer-scale nanofabrication techniques, advanced MOVPE growth, characterisation methods and Design Centering will then be deployed in the design and manufacture of innovative and emerging devices including core-shell structures for LEDs and photovoltaic applications, and nano-beam sensors that incorporate photonic crystals. Having established the core capability for the III-Nitrides, it will be extended to nanostructuring other semiconductors, notably InP and related materials as used in the manufacture of devices for optical fibre telecommunications.

本提案的目标是为21世纪的制造业开发氮化镓（GaN）和相关材料（AlN和InN）的先进制造工艺，统称为iii -氮化物。iii -氮化物是支撑新兴的全球固态照明和电力电子工业的功能材料。但它们的特性使其具有更广泛的应用：通过光伏效应和水分解进行太阳能转换，水净化，通过光子和压电效应进行传感，以及在非线性光学中。iii -氮化物的这些功能的许多应用得到了增强，甚至可以通过创建三维（3D）纳米结构来实现。因此，所提出的研究的特别重点是在制造规模上开发和纳米结构工艺，并在一系列创新材料和器件中释放iii -氮化物半导体的这些特性的潜力。该研究将解决和解决1)工业需要能够将基于单个片或晶圆碎片的实验室结果扩展到直径高达6英寸的晶圆批次，2)需要能够设计出具有制造公差的坚固设备，以及3)需要快速表征设备以提高封装产量。潜在的商业开发制造工艺和创新材料和设备将由申请人的公司合作伙伴协助和领导。研究计划的开始是通过纳米压印光刻技术和新开发的位移塔尔博特光刻技术开发晶圆级（高达6英寸）纳米图案的核心能力，这是一种产生纳米结构的潜在颠覆性技术。然后，这些光刻技术将与加法和减法工艺相结合，在整个晶圆上形成3D纳米结构。在一个主要应用中，所开发的纳米制造技术将用于开发非极性和半极性GaN模板的金属有机气相外延（MOVPE）生长的制造工艺，以解决量子受限斯塔克效应限制发光二极管（led）和GaN基激光二极管效率的持续问题。被称为定心设计的计算机辅助设计方法将用于工艺优化，以最大限度地提高纳米结构器件（最初是led）的产量。另一项活动将是探索电子束和光学技术的使用，这些技术能够在亚微米尺度上表征材料和设备，作为筛选材料和部分加工设备的生产工具。晶圆级纳米制造技术、先进的MOVPE生长、表征方法和设计中心的结合，将用于创新和新兴器件的设计和制造，包括led和光伏应用的核壳结构，以及包含光子晶体的纳米束传感器。在建立了iii -氮化物的核心能力之后，它将扩展到纳米结构其他半导体，特别是用于制造光纤电信设备的InP和相关材料。