Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case

纳米工程 III-N 半导体的制造：设备业务案例

• 批准号: EP/M022862/1
• 负责人: Philip Shields
• 金额: $ 36.52万
• 依托单位: University of Bath
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2015
• 资助国家: 英国
• 起止时间: 2015 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FM022862%2F1
• 关键词: Manufacturing; nano; engineered; III; semiconductors

Tools for defining nanoscale device geometry are widely used in CMOS manufacturing but the economies of scale of Si VLSI do not apply to most other semiconductor industries. Conventional photolithographic techniques are limited by the size of the smallest features that they can pattern so that achieving even smaller features typically requires using the expensive and slow technique of Electron Beam Lithography. As a result only very small regions can be patterned at the highest resolution. Cost-effective wafer-scale solutions for nanoscale devices do exist but are less widely available. They include Nanoimprint Lithography (NIL), Self-Assembly Lithography (SAL), or more recently Displacement Talbot Lithography (DTL). NIL can achieve sub-10nm features but is very sensitive to particle defects, SAL is cheap but is restricted to limited patterns and domain sizes, and DTL is a new and potentially disruptive technology for applications in the 150-1000 nm range (No DTL systems exist in the UK). The aim of this grant is to bring the two techniques of NIL and DTL more into the mainstream by demonstrating their capability for up-scaling from small area nanopatterned materials or devices into full wafers. The NIL and DTL equipment will allow us to determine the most suitable technique (since either one will not satisfy the requirements for all applications) and related nanofabrication processes creating nano-scale patterns (10-1000 nm) in a range of materials for a variety of applications.The ability to nanopattern at the wafer scale is essential for commercial production of emerging device types and for research applications where large-area uniformity is necessary for subsequent processing steps. An example of the latter is crystal growth on nanopatterned substrates since large area patterns are essential to achieve good uniformity of growth in the growth reactor. The ultimate goal behind establishing these nanolithography techniques is to develop advanced fabrication processes for the UK's 21st Century manufacturing industries, and in particular the manufacturing of III-Nitride semiconductor materials. The III-Nitrides are functional materials that underpin the emerging global solid state lighting and power electronics industries. But their properties enable far wider applications: solar energy conversion by photovoltaic effect and water splitting, water purification, sensing by photonic and piezoelectric effects and in non-linear optics. Many applications of these functions of the III-Nitrides are enhanced, even enabled by creating three dimensional (3D) nanostructures. However the exploitation of these properties can only be achieved if there are production-worthy processes available. Hence the purpose of this proposal.

用于定义纳米级器件几何形状的工具广泛用于 CMOS 制造，但 Si VLSI 的规模经济并不适用于大多数其他半导体行业。传统的光刻技术受到其可图案化的最小特征尺寸的限制，因此实现更小的特征通常需要使用昂贵且缓慢的电子束光刻技术。因此，只能以最高分辨率对非常小的区域进行图案化。针对纳米级器件的具有成本效益的晶圆级解决方案确实存在，但应用范围较小。它们包括纳米压印光刻 (NIL)、自组装光刻 (SAL) 或最近的位移塔尔博特光刻 (DTL)。 NIL 可以实现亚 10 纳米特征，但对颗粒缺陷非常敏感；SAL 价格便宜，但仅限于有限的图案和域尺寸；DTL 是一种新的、潜在颠覆性的技术，适用于 150-1000 纳米范围内的应用（英国不存在 DTL 系统）。这笔资助的目的是通过展示 NIL 和 DTL 两种技术从小面积纳米图案材料或器件放大到全晶圆的能力，将 NIL 和 DTL 两种技术带入主流。 NIL 和 DTL 设备将使我们能够确定最合适的技术（因为任何一种技术都无法满足所有应用的要求）以及相关的纳米加工工艺，从而在适合各种应用的一系列材料中创建纳米级图案（10-1000 nm）。晶圆级纳米图案的能力对于新兴设备类型的商业生产以及后续处理步骤需要大面积均匀性的研究应用至关重要。后者的一个例子是纳米图案基底上的晶体生长，因为大面积图案对于在生长反应器中实现良好的生长均匀性至关重要。建立这些纳米光刻技术的最终目标是为英国 21 世纪的制造业，特别是 III 族氮化物半导体材料的制造开发先进的制造工艺。 III 氮化物是支撑新兴全球固态照明和电力电子行业的功能材料。但它们的特性使其具有更广泛的应用：通过光伏效应和水分解进行太阳能转换、水净化、通过光子和压电效应进行传感以及非线性光学。 III 族氮化物的这些功能的许多应用都得到了增强，甚至可以通过创建三维 (3D) 纳米结构来实现。然而，只有存在可用于生产的工艺，才能实现对这些特性的利用。这就是本提案的目的。

项目成果

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

As 和 Ga 平衡在通过选择性区域外延获得长 GaAs 纳米线中的重要性

• DOI: 10.1021/acs.cgd.3c00172
• 发表时间: 2023
• 期刊: Crystal Growth & Design
• 影响因子: 3.8
• 作者: Chereau E

Spatial periodicities inside the Talbot effect: understanding, control and applications for lithography.

• DOI: 10.1364/oe.431698
• 发表时间: 2021-08
• 期刊: Optics express
• 影响因子: 3.8
• 作者: P. Chaussé;P. Shields

InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

• DOI: 10.1021/acsanm.9b02154
• 发表时间: 2020-03-01
• 期刊: ACS APPLIED NANO MATERIALS
• 影响因子: 5.9
• 作者: Athanasiou, Modestos;Papagiorgis, Paris;Itskos, Grigorios
• 通讯作者: Itskos, Grigorios

Understanding resolution limit of displacement Talbot lithography

• DOI: 10.1364/oe.27.005918
• 发表时间: 2019-03-04
• 期刊: OPTICS EXPRESS
• 影响因子: 3.8
• 作者: Chausse, P. J. P.;Le Boulbar, E. D.;Shields, P. A.
• 通讯作者: Shields, P. A.

Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes.

• DOI: 10.1021/acs.nanolett.2c04826
• 发表时间: 2023-02-22
• 期刊: NANO LETTERS
• 影响因子: 10.8
• 作者: Cameron, Douglas;Coulon, Pierre-Marie;Fairclough, Simon;Kusch, Gunnar;Edwards, Paul R.;Susilo, Norman;Wernicke, Tim;Kneissl, Michael;Oliver, Rachel A.;Shields, Philip A.;Martin, Robert W.
• 通讯作者: Martin, Robert W.