A National Thin-Film Cluster Facility for Advanced Functional Materials

我们建议在牛津大学建立一个尖端的集群设施，用于先进功能材料的薄膜沉积，并作为国家研究设施运行。该设备将使先进功能材料的多层结构能够在真空下通过一系列沉积工艺制造，具有前所未有的控制和多功能性。要沉积的材料系统包括有机，杂化（钙钛矿），金属氧化物和金属硫族半导体，有机和金属氧化物电介质，透明导电金属氧化物和金属。薄膜集群设施将为多层功能材料和器件设计提供一种强大的新组合方法，这与目前在英国许多不同地点存在的小而孤立的沉积室所能实现的效果有很大不同。至关重要的是，它包括中央处理单元，用于在专用于不同材料和工艺的沉积室之间的真空下传递薄膜涂层基板。这种集束工具方法将避免材料在腔室之间过渡时被大气污染，这意味着将实现真正的多层沉积（没有降解的界面）。此外，将不同的材料族和工艺分离到不同的沉积室中，避免了在同一沉积室中存在多种材料时通常发生的污染。因此，该设备将作为高通量薄膜沉积工具，在广泛的材料和应用中具有多层沉积和器件结构的最终精度。它将对英国已经非常强大的现有解决方案处理技术进行补充（和协同），并填补英国研发组合的战略空白。该设施将是世界上独一无二的，并将英国置于下一代能源、光子学和电子学应用材料和设备开发的中心。该设施将成为英国新型薄膜开发的中心，加强由EPSRC资助的连贯研究工作。学术界和工业界之间的现有联系将得到加强，随着这种与工业相关的能力为不断发展的技术行业提供具有新颖功能的新材料和设备，将建立新的联系。

We propose to establish a cutting-edge cluster facility for thin-film deposition of Advanced Functional Materials to be located at the University of Oxford and run as a National Research Facility. This facility will enable multilayer structures of advanced functional materials to be fabricated through a range of deposition processes under vacuum with unprecedented control and versatility. The material systems to be deposited include organic, hybrid (perovskite), metal oxide and metal-chalcogenide semiconductors, organic and metal oxide dielectrics, transparent conducting metal oxides and metals. The Thin-Film Cluster Facility will provide a powerful new combinatorial approach to multi-layer functional material and device design that substantially differs from what can currently be achieved with the number of smaller, isolated deposition chambers that exist in many different locations throughout the UK. Crucially, it comprises central handler units that serve to pass thin-film coated substrates under vacuum between deposition chambers dedicated to different materials and processes. This cluster tool approach will avoid material contamination by atmosphere on transition between chambers, meaning that genuine multi-layer deposition (without degraded interfaces) will be achieved. In addition, the separation of different material families and processes into different deposition chambers avoids contamination that typically occurs when multiple materials are present in the same deposition chamber. The facility will hence act as a high-throughput thin-film deposition tool with ultimate accuracy in multi-layer deposition and device construction for a broad range of materials and applications. It will be complementary (and synergetic) to existing solution-processed techniques in which the UK is already very strong, and fill a strategic gap in the UK's research & development portfolio. The facility will be unique world-wide and place the UK at the center of the development of next-generation materials and devices for applications in energy, photonics and electronics. The facility will act as an epicenter for novel thin film development within the UK, enhancing the coherent research effort funded by EPSRC. Existing links between academia and industry will be strengthened and new links made as this industrially relevant capability delivers new materials and devices with novel functionality to a growing technology industry.