Nanostructured half-Heuslers for thermoelectric waste heat recovery

用于热电废热回收的纳米结构半赫斯勒

• 批准号: EP/N017218/1
• 负责人: Donald MacLaren
• 金额: $ 50.1万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FN017218%2F1
• 关键词: Nanostructured; half; Heuslers; thermoelectric; waste

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

目前GtR中并没有提供所有资助研究的摘要。这通常是因为在提交提案时不需要摘要，但也可能是因为它包含敏感信息，如个人详细信息。

项目成果

Correction of EELS dispersion non-uniformities for improved chemical shift analysis.

校正 EELS 分散不均匀性以改进化学位移分析。

• DOI: 10.1016/j.ultramic.2020.113069
• 发表时间: 2020
• 期刊: Ultramicroscopy
• 影响因子: 2.2
• 作者: Webster R

Grain-by-Grain Compositional Variations and Interstitial Metals-A New Route toward Achieving High Performance in Half-Heusler Thermoelectrics

• DOI: 10.1021/acsami.7b14525
• 发表时间: 2018-02-07
• 期刊: ACS APPLIED MATERIALS & INTERFACES
• 影响因子: 9.5
• 作者: Barczak, Sonia A.;Halpin, John E.;Bos, Jan-Willem G.
• 通讯作者: Bos, Jan-Willem G.

Epitaxial vanadium nanolayers to suppress interfacial reactions during deposition of titanium-bearing Heusler alloys on MgO(0 0 1)

外延钒纳米层在 MgO(0 0 1) 上沉积含钛霍斯勒合金期间抑制界面反应

• DOI: 10.1016/j.apsusc.2020.145649
• 发表时间: 2020
• 期刊: Applied Surface Science
• 影响因子: 6.7
• 作者: Webster R

Spontaneous formation of nanostructures during pulsed laser deposition of epitaxial half-Heusler TiNiSn on MgO(001)

• DOI: 10.1063/1.5052361
• 发表时间: 2019-01-01
• 期刊: APL MATERIALS
• 影响因子: 6.1
• 作者: Webster, R. W. H.;Halpin, J. E.;MacLaren, D. A.
• 通讯作者: MacLaren, D. A.

Suppression of thermal conductivity without impeding electron mobility in n-type XNiSn half-Heusler thermoelectrics

• DOI: 10.1039/c9ta10128d
• 发表时间: 2019-12-21
• 期刊: JOURNAL OF MATERIALS CHEMISTRY A
• 影响因子: 11.9
• 作者: Barczak, S. A.;Quinn, R. J.;Bos, J. W. G.
• 通讯作者: Bos, J. W. G.