X-RAY DIFFRACTION CAPABILITY FOR NANOSCALE AND THIN FILM STRUCTURE

纳米级和薄膜结构的 X 射线衍射能力

• 批准号: EP/P001513/1
• 负责人: Jonathan Alaria
• 金额: $ 45.87万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FP001513%2F1
• 关键词: RAY; DIFFRACTION; CAPABILITY; NANOSCALE; THIN

The specific arrangements of matter at the atomic scale gives advance functional materials their unique properties. Therefore, the future in materials design relies on our ability to control nanoscale structures. To achieve this, a vital tool for material scientist is x-ray diffraction as it allows in-depth characterisation of the crystal structure.Here we propose to establish an x-ray diffractometer dedicated to nanoscale and thin film structure with a set of capabilities which will enable material scientist to study the structural properties of polycrystalline and epitaxial films and probe the interface quality and structure which often dictates the performance and functionality of the nanoscale material. The high throughput capability offered by this equipment will play a vital role in atomic scale design of functional materials and process optimisation for integration in device. It will enable the routine measurement of phase purity, crystalline quality, thickness and roughness using non-destructive method. More advanced measurements will be used to determine epitaxial relationship and texture of the nanostructures. The materials studied have applications in renewable energy (photovoltaic, battery, thermoelectric), electronic (transparent conducting oxides, dielectrics, semiconductor alloys)

物质在原子尺度上的特殊排列赋予了先进功能材料独特的性质。因此，材料设计的未来取决于我们控制纳米级结构的能力。为了实现这一目标，材料科学家的一个重要工具是x射线衍射，因为它可以深入表征晶体结构。在这里，我们建议建立一个专用于纳米级和薄膜结构的x射线衍射仪，它将使材料科学家能够研究多晶和外延薄膜的结构特性，并探测通常决定纳米级材料性能和功能的界面质量和结构。该设备提供的高通量能力将在功能材料的原子尺度设计和设备集成的工艺优化中发挥重要作用。它将使常规测量相纯度，结晶质量，厚度和粗糙度使用非破坏性的方法。更先进的测量将用于确定外延关系和纳米结构的纹理。所研究的材料在可再生能源（光伏、电池、热电）、电子（透明导电氧化物、介电材料、半导体合金）等领域有广泛的应用。

项目成果

Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes

• DOI: 10.1063/1.5108870
• 发表时间: 2018-05
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Z. Cao;T. Veal;M. Ashwin;K. Dawson;I. Sandall

Chemically Controllable Magnetic Transition Temperature and Magneto-Elastic Coupling in MnZnSb Compounds

MnZnSb 化合物中化学可控磁转变温度和磁弹性耦合

• DOI: 10.1002/adfm.202100108
• 发表时间: 2021
• 期刊: Advanced Functional Materials
• 影响因子: 19
• 作者: Murgatroyd P

Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance

• DOI: 10.1063/1.5027157
• 发表时间: 2018-08-01
• 期刊: APL MATERIALS
• 影响因子: 6.1
• 作者: Birkett, Max;Linhart, Wojciech M.;Veal, Tim D.
• 通讯作者: Veal, Tim D.

Transparent Ta doped SnO2 films deposited by RF co-sputtering

射频共溅射沉积透明 Ta 掺杂 SnO2 薄膜

• DOI: 10.1109/pvsc.2018.8547755
• 发表时间: 2018
• 作者: Featherstone T

Persistence of Ferroelectricity Close to Unit-Cell Thickness in Structurally Disordered Aurivillius Phases

• DOI: 10.1021/acs.chemmater.0c03454
• 发表时间: 2020-12-22
• 期刊: CHEMISTRY OF MATERIALS
• 影响因子: 8.6
• 作者: Keeney, Lynette;Saghi, Zineb;Colfer, Louise
• 通讯作者: Colfer, Louise