Manufacturing at the 7nm node and beyond enabled by novel resist technology

现代世界依赖于手机、笔记本电脑和平板电脑等电子设备。这类设备的计算能力呈指数级增长，因为自20世纪50年代末以来，电子行业每两年就能将零部件的尺寸缩小两倍。在不久的将来，关键部件-场效应晶体管(FET)-将位于7纳米节点，稍后它们将变得更小。电子行业正在引入极端紫外光刻技术来写入这样的纳米级FET。这就产生了本提案中解决的多个挑战。制造FET的一个关键因素是抗蚀剂材料，图案在被转移到硅之前被写入抗蚀剂材料。我们开发了一系列新的抗蚀剂材料，这些材料具有出色的分辨率，并且在长宽比(即特征相对于其宽度的高度)和线条边缘粗糙度方面处于世界领先地位。它们具有独特的刻蚀性能，使我们能够将薄的深结构写入硅和其他材料中。在这里，我们将利用独特的特性来制造将在未来的电子设备中使用的关键结构。这些包括：用于使用光刻技术写入设备的极端紫外线辐射的掩膜；散热散热所需的散热器，这些散热器由非常高的薄FET产生；改进的电子发射器提高电子束写入的亮度。我们将进一步改进我们的抗蚀剂以提高灵敏度，并在保持高分辨率结构的同时满足未来写入速度的行业目标。一支由化学家、物理学家、工程师和材料科学家组成的世界领先团队已经组建，其结果将是多项突破，将使7纳米节点甚至更远的制造成为可能。

The modern world is dependent on electronic devices such as mobile phones and laptop computers and tablets. The computing power of such devices has increased exponentially because the electronics industry has been able to reduce the size of components by a factor of two every two years since the late 1950s. In the near future the key components - field-effect transistors (FETs) - will be at the 7 nm node and later they will be still smaller. The electronics industry is introducing extreme UV lithography to write such nanoscale FETS. This produces multiple challenges that are addressed in this proposal. A key factor in manufacturing FETs is the resist material into which the pattern is written before it is transferred into silicon. We have developed a new family of resist materials which give excellent resolution, and that are world leading in their aspect ratios (i.e. how high a feature can be against its width) and line edge roughness. They have unique etch performance which enables us to write thin deep structures into silicon and into other materials. Here we will exploit the unique characteristics to make key structures that will be used in future electronic devices. These include: masks through which extreme UV radiation will be used to write devices using lithography; heat sinks which are needed to dissipate heat generated by very tall thin FETs; improved electron emitters to increase the brightness of electron-beam writes. We will further engineer our resists to increase sensitivity and meet future industry targets for write speed while maintaining high resolution structures. A world leading team of chemists, physicists, engineers and material scientists has been assembled and the outcome will be multiple breakthroughs that will enable manufacturing at the 7 nm node and beyond.