Anti-ferroelectric materials for non-volatile memory applications

用于非易失性存储器应用的反铁电材料

• 批准号: EP/R028656/1
• 负责人: Melvin Vopson
• 金额: $ 1.49万
• 依托单位: University of Portsmouth
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FR028656%2F1
• 关键词: Anti; ferroelectric; materials; non; volatile

The worldwide demand for digital data storage is increasing exponentially. IBM estimates that 2.5 quintillion of digital data bytes are produced every day on Earth (2.5 x 1018 bytes = 2.5 Exabytes = 2.5 billion Gigabytes). This huge digital data storage demand has two consequences: a) the increased power consumption of data storage servers; b) the perpetual need to develop data storage technologies that meet the increasing demand at reduced cost and power consumption. These issues have prompted the acceleration of research into solid-state memories, which are fast replacing traditional magnetic hard disc drives in almost all consumer electronics and portable devices. In Dec. 2016 and Jan. 2017, the principal investigator (PI) of this travel grant and his co-investigator from Iowa State University, proposed and demonstrated, for the first time, a novel solid-state memory effect in bulk anti-ferroelectric ceramic materials [1-3]. Although this is a very promising discovery, the authors pointed out a few issues that required further investigation, including a relaxation process that significantly limited the signal recovered from a memory cell. In addition, it was acknowledged that the effect was observed in bulk anti-ferroelectric materials, while solid-state memory chips are based on thin films. This modest EPSRC overseas travel grant (< £15k), seeks to swiftly redress these issues by facilitating five weeks travel to three overseas institutions, in two countries, in order to perform specialized experiments on anti-ferroelectric materials and to acquire key skills that will advance our understanding of anti-ferroelectric materials and potentially accelerate the commercialization of this research. By working with leading researchers in the field of data storage technologies at Western Digital (WD) - California, physics of anti-ferroelectric materials at Iowa State University (ISU) and experts in Mossbauer Spectroscopy at the National Institute of Materials Physics (NIMP) in Bucharest, the PI will have the opportunity to study relaxation processes and memory effect in anti-ferroelectric thin films. In addition, the PI will acquire valuable new experimental skills such as: fabrication of anti-ferroelectric materials and their domains imaging using in-situ Transmission Electron Microscopy (ISU), device architecture / solid state memory cell testing (WD) and Mossbauer Spectroscopy (NIMP). This is an excellent value for money low-risk / high-gain EPSRC travel grant, with huge potential for academic, societal and economic impacts. [1]. M. Vopson, X. Tan, 4-state anti-ferroelectric random access memory, Electron Device Letters (2016).[2]. M. Vopson, G. Caruntu, X. Tan, Polarization reversal and memory effect in anti-ferroelectric materials, Scripta Materialia vol. 128, 61-64 (2017).[3]. M. Vopson, X. Tan, Nonequilibrium polarization dynamics in antiferroelectrics, Physical Review B 96 (1), 014104 (2017)

全球对数字数据存储的需求呈指数级增长。IBM估计，地球上每天产生2.5 quintillion的数字数据字节（2.5 x 1018字节= 2.5艾字节= 25亿兆字节）。这种巨大的数字数据存储需求具有两个后果：a）数据存储服务器的功耗增加; B）开发以降低的成本和功耗满足增长的需求的数据存储技术的永久需求。这些问题促使了对固态存储器的研究加速，固态存储器正在几乎所有消费电子产品和便携式设备中快速取代传统的磁性硬盘驱动器。2016年12月和2017年1月，该旅行资助的主要研究者（PI）及其来自爱荷华州州立大学的合作研究者首次提出并证明了块体反铁电陶瓷材料中的新型固态记忆效应[1-3]。虽然这是一个非常有希望的发现，但作者指出了一些需要进一步研究的问题，包括显著限制从存储单元恢复的信号的弛豫过程。此外，人们承认，这种效应是在块状反铁电材料中观察到的，而固态存储器芯片是基于薄膜的。EPSRC海外旅行补助金（<15，000英镑）旨在通过促进五周的旅行到两个国家的三个海外机构来迅速解决这些问题，以便对反铁电材料进行专业实验，并获得关键技能，这将促进我们对反铁电材料的理解，并可能加速这项研究的商业化。通过与西部数据（WD）-加州的数据存储技术领域的领先研究人员，爱荷华州州立大学（ISU）的反铁电材料物理学和布加勒斯特国家材料物理研究所（NIMP）的穆斯堡尔光谱学专家合作，PI将有机会研究反铁电薄膜的弛豫过程和记忆效应。此外，PI将获得宝贵的新的实验技能，如：反铁电材料的制造及其域成像使用原位透射电子显微镜（ISU），器件架构/固态存储单元测试（WD）和穆斯堡尔谱（NIMP）。这是一个非常物有所值的低风险/高收益EPSRC旅行补助金，具有巨大的学术，社会和经济影响潜力。[1]的文件。M. Vopson，X. Tan，4态反铁电随机存取存储器，Electron Device Letters（2016）。[2]的文件。M. Vopson，G.卡伦图角Tan，反铁电材料中的极化反转和记忆效应，Scripta Materialia第128卷，61-64（2017）。[3]的文件。M. Vopson，X. Tan，反铁电体中的非平衡极化动力学，物理评论B 96（1），014104（2017）

项目成果

The mass-energy-information equivalence principle

• DOI: 10.1063/1.5123794
• 发表时间: 2019-09-01
• 期刊: AIP ADVANCES
• 影响因子: 1.6
• 作者: Vopson, Melvin M.

A new method to study ferroelectrics using the remanent Henkel plots

利用剩余汉克尔图研究铁电体的新方法

• DOI: 10.1088/1361-6463/aabe16
• 发表时间: 2018
• 期刊: Applied Physics
• 作者: Vopson M

Sub-lattice polarization states in anti-ferroelectrics and their relaxation process

• DOI: 10.1016/j.cap.2019.03.009
• 发表时间: 2019-05
• 期刊: Current Applied Physics
• 影响因子: 2.4
• 作者: M. Vopson;X. Tan;E. Namvar;M. Belusky;S. P. Thompson;V. Kuncser;F. Plazaola;I. Unzueta;C. Tang