Ferroelectric gating for agile and reconfigurable 2D electronics

用于敏捷和可重构二维电子器件的铁电门控

• 批准号: EP/T027207/1
• 负责人: Marin Alexe
• 金额: $ 107.06万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FT027207%2F1
• 关键词: Ferroelectric; gating; agile; reconfigurable; 2D

Smart technologies are infiltrating our daily lives. From healthcare to transport to entertainment, electronics that adapt to our desires are becoming ubiquitous. For electronics hardware, this is creating a pull for the design of responsive and agile next generation technologies that can provide rapid, flexible and multifunctional devices.To realise electronic functionality, voltages are used to control the electrical properties of materials, changing the conductivity of a channel to create transistors, diodes, memory elements and more, with the function tied to the device geometry. The performance of the electrical device depends on both the material used for the conducting channel and the way the voltage is coupled to it. Similar devices are also used to probe the fundamental Physics of electronic interactions in materials, where a voltage can be used to control the number of charge carriers in the material in order to study the effect of interactions between them. These interactions can lead to novel phases, such as unconventional superconductivity or reversible transitions from metallic to insulating behaviour, that offer new opportunities for advanced electronics. The functionality of the devices is thus tied to the design and integration of advanced functional materials to engender the optimal physical properties to the conducting channel and its most efficient coupling to the applied control voltage. For the conducting channel, two-dimensional materials (2DMs) are one of the most exciting areas of research and are an area in which the UK is truly world-leading. There are now large and diverse families of 2DMs, with metallic, semiconducting, insulating, magnetic, superconducting and more properties. As they are atomically thin, the external voltage effects all of the atoms in the 2DM equally, giving more defined control over the conductivity than in conventional three-dimensional materials. Coupling to external voltages, with spatial control over the pattern of applied voltages, can be used to create highly efficient light-emitting diodes, transistors, and memory elements. What is achievable is usually limited by the coupling to the external voltage.Ferroelectrics offer the potential to dynamically control this coupling, with nanoscale spatial resolution and fast switching. A ferroelectric has a spontaneous polarisation, with a large net surface charge, organised in nanoscale domains of positive or of negative surface charge. If a 2DM is placed on a ferroelectric, with a clean interface between them, this surface charge can dramatically alter the electronic properties of the 2DM by changing the number of charge carriers in the 2DM. By dynamically controlling the domain structure in the ferroelectric, fast and agile 2D electronics can be formed. Unfortunately, although proof-of-principle devices have been made, efficient coupling between ferroelectrics and 2DM has not yet been achieved.Our team is uniquely suited to address this challenge, developing optimised processes for integrating 2DMs and ferroelectrics and demonstrating new agile electronics based on moving and switching the domains in the ferroelectric. By doing this, we will bring together two important fields, taking the potential of each to create a new area that will give new opportunities for probing fundamental Physics and developing new electronics.

智能技术正在渗透到我们的日常生活中。从医疗到交通再到娱乐，满足我们需求的电子产品正变得无处不在。对于电子硬件来说，这正在为响应迅速和敏捷的下一代技术的设计创造动力，这些技术可以提供快速、灵活和多功能的设备。为了实现电子功能，电压被用来控制材料的电性能，改变通道的导电性，以创建晶体管、二极管、存储元件等，其功能与器件的几何形状相关联。电气设备的性能取决于用于导电通道的材料和与之耦合的电压方式。类似的设备也被用于探测材料中电子相互作用的基本物理，其中电压可以用来控制材料中电荷载流子的数量，以研究它们之间相互作用的影响。这些相互作用可以导致新的相，例如非常规的超导性或从金属到绝缘行为的可逆转变，为先进的电子产品提供了新的机会。因此，器件的功能与先进功能材料的设计和集成有关，以产生导电通道的最佳物理特性及其与施加的控制电压的最有效耦合。对于导电通道，二维材料（2dm）是最令人兴奋的研究领域之一，也是英国真正处于世界领先地位的领域。现在有大量不同的2dm家族，具有金属、半导体、绝缘、磁性、超导等特性。由于它们是原子薄的，外部电压对2DM中的所有原子都有相同的影响，与传统的三维材料相比，对电导率有更明确的控制。与外部电压的耦合，以及对施加电压模式的空间控制，可用于制造高效的发光二极管、晶体管和存储元件。可实现的通常受限于与外部电压的耦合。铁电体提供了动态控制这种耦合的潜力，具有纳米级的空间分辨率和快速切换。铁电具有自发极化，具有较大的净表面电荷，组织在纳米级的正或负表面电荷域。如果将2DM放置在铁电体上，它们之间有一个干净的界面，这种表面电荷可以通过改变2DM中载流子的数量来显著改变2DM的电子特性。通过对铁电畴结构的动态控制，可以形成快速灵活的二维电子器件。不幸的是，尽管已经制造了原理验证设备，但铁电体和2DM之间的有效耦合尚未实现。我们的团队非常适合应对这一挑战，开发了集成2dm和铁电体的优化流程，并展示了基于铁电体中移动和切换域的新型敏捷电子产品。通过这样做，我们将把两个重要的领域结合在一起，发挥每个领域的潜力，创造一个新的领域，为探索基础物理学和发展新的电子学提供新的机会。

项目成果

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

• DOI: 10.1021/acsnano.2c00079
• 发表时间: 2022-02-22
• 期刊: ACS NANO
• 影响因子: 17.1
• 作者: Luo, Zheng-Dong;Zhang, Siqing;Hao, Yue
• 通讯作者: Hao, Yue

Enhanced Photoconductivity at Dislocations in SrTiO3

SrTiO3 中位错处的光电导性增强

• DOI: 10.26083/tuprints-00023232
• 发表时间: 2023
• 作者: Kissel M

Photoinduced Negative Differential Resistivity and Gunn Oscillations in SrTiO3.

• DOI: 10.1002/advs.202306420
• 发表时间: 2023-12
• 期刊: ADVANCED SCIENCE
• 影响因子: 15.1
• 作者: Soleimany, Mehrzad;Alexe, Marin
• 通讯作者: Alexe, Marin

ARPES Signatures of Few-Layer Twistronic Graphenes.

• DOI: 10.1021/acs.nanolett.3c01173
• 发表时间: 2023-06-14
• 期刊: NANO LETTERS
• 影响因子: 10.8
• 作者: Nunn, James E. E.;McEllistrim, Andrew;Weston, Astrid;Garcia-Ruiz, Aitor;Watson, Matthew D. D.;Mucha-Kruczynski, Marcin;Cacho, Cephise;Gorbachev, Roman V. V.;Fal'ko, Vladimir I. I.;Wilson, Neil R. R.
• 通讯作者: Wilson, Neil R. R.

ARPES signatures of few-layer twistronic graphenes

几层双电子石墨烯的 ARPES 特征

• DOI: 10.48550/arxiv.2304.01931
• 发表时间: 2023
• 作者: Nunn J