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RAISIN - QT Network for Single-ion Implantation Technologies and Science

RAISIN - QT Network for Single-ion Implantation Technologies and Science
RAISIN - 单离子植入技术和科学的 QT 网络
批准号:
EP/W027070/1
负责人:
Steven Clowes
金额:
$56.61万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2022
资助国家:
英国
项目状态:
未结题
起止时间:
2022 至 --

项目摘要

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中文摘要
翻译
有几种相互竞争的方法已经显示出利用量子系统的前景,但大规模工业复制的最实用途径,也是最有可能在商业上采用的途径,是通过利用固态中的植入杂质。使用单一杂质的非常成功的量子技术(QT)平台包括金刚石中的缺陷复合物(场传感器,成像等),硅中的供体(量子计算机门)和氧化物中的稀土离子(量子存储器和量子通信中继器)。注入是现有的可扩展制造路线,并且存在几种新兴的确定性注入单杂质(ISI)的策略,以产生紧凑的大量子位阵列或多个相同的单量子位器件。确定性ISI成功率高达99.87%。然而,很少有量子技术原型的例子,其中杂质是确定性放置的,并且没有杂质是通过注入确定性放置的。只有一份关于单原子水平的植入后质量控制的报告。因此,挑战是验证确定性ISI事后,驱动创新,并产生基于这种能力的有价值的QT。萨里大学是国际上领导ISI工具开发的几个团体之一。独特的是,我们建议建立一个国际网络,RAISIN(植入单一杂质网络应用路线图),以促进和促进这些正在开发使能技术的团体(ISI开发人员)和致力于量子技术和科学前沿的团体(QT应用社区)的许多不同研究活动之间的合作。RAISIN将具有前瞻性,因此将重点关注量子技术和科学,它将使(QT“拉”)以及ISI的发展(ISI“推”)。它将有意地有一个与低能量ISI将实现的量子科学和技术相关的明确定义的范围。因此,它将补充范围重叠的现有网络。特别是,原子能机构的协调研究项目:“离子束诱导的材料时空结构演化:新技术时代的加速器”更加强调加速器技术,并侧重于ISI开发人员之间的合作,而例如,国际硅量子电子学研讨会的与会者包括一部分杂质QT科学家(沿着其他涉及量子点的硅基QT)。将制定ISI QT的路线图,以加速量子技术的发展。
英文摘要
There are several competing methodologies that have shown the promise of exploiting quantum systems, but the most practical route for large-scale industrial reproduction, and the one most likely to be adopted commercially, is through the exploitation of implanted impurities in the solid-state. Very successful quantum technology (QT) platforms using single impurities include defect complexes in diamond (field sensors, imaging etc), donors in silicon (quantum computer gates), and rare earth ions in oxides (quantum memory and quantum communications repeaters). Implantation is an existing scalable fabrication route, and there are several emerging strategies to deterministic implanted single impurities (ISI) to produce compact large-arrays of qubits or multiple, identical single-qubit devices. Deterministic ISI success rates as high as 99.87% are claimed. However, there are very few quantum technology prototype examples where the impurity is deterministically placed, and none where the impurity is deterministically placed by implantation. There is only one report of a post-implant quality control at the single atom level. The challenges are therefore to verify the deterministic ISI post-hoc, drive innovation, and to produce valuable QTs based on this capability.The University of Surrey is one of several groups internationally that are leading the development of the tools that will enable ISI. Uniquely, we are proposing the establishment of an international network, RAISIN (Roadmap for Applications of Implanted Single Impurities Network), to promote and facilitate collaborations between these groups that are developing the enabling technology (ISI developers) and the many diverse research activities of groups who are working at the leading edge of quantum technologies and sciences (QT applications community). RAISIN will be forward-looking and will therefore have a strong emphasis on the quantum technologies and science that it will enable (the QT "pull") as well as the ISI development (the ISI "push"). It will intentionally have a well-defined scope associated with the quantum science and technologies that low-energy ISI will enable. As such it will complement existing networks that have overlapping scopes. In particular, the IAEA coordinated research project: 'Ion beam induced spatio-temporal structural evolution of materials: accelerators for a new technology era' has a stronger emphasis on accelerator technology and focusses on collaboration among ISI developers, while for example, the International Silicon Quantum Electronics Workshop attendees include a subset of impurity QT scientists (along with other silicon-based QTs involving quantum dots). A roadmap for ISI QT's will be developed to accelerate the development of quantum technologies in general.
期刊论文(1)
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科研奖励(0)
会议论文
Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy
X 射线荧光显微镜对数百个原子的检测灵敏度极限
DOI: 10.48550/arxiv.2310.03409
发表时间: 2023
期刊:
影响因子: --
作者: [Masteghin M]
通讯作者: Masteghin M
Route to high-precision positioning of single ion-implanted impurities in silicon
  • 批准号:
    EP/X018989/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $23.8万
  • 财政年份:
    2023
  • 负责人:
    Steven Clowes
  • 依托单位:
NON-MAGNETIC SEMICONDUCTOR SPINTRONICS: INNOVATIONS IN NANOSCALE, HIGHLY SPIN-ORBIT COUPLED QUANTUM WELL SYSTEMS
  • 批准号:
    EP/E055583/1
  • 项目类别:
    Fellowship
  • 资助金额:
    $74.83万
  • 财政年份:
    2007
  • 负责人:
    Steven Clowes
  • 依托单位:
国内基金
海外基金
冠脉微循环障碍与Tp-e间期、Tp-e/QT比值的相关性研究
  • 批准号:
    2025JJ81114
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2025
  • 负责人:
    罗进
  • 依托单位:
KCNJ2基因突变引起罕见长QT综合征的心肌发育电生理紊乱的作用机制研究
索拉非尼抑制hERG蛋白导致QT间期延长的潜在机制研 究
心脏钾通道KCNH2基因新突变致长QT综合征的分子机制研究
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
  • 依托单位: