Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility

支撑设备增强 EPSRC 国家外延设施的半导体表征能力

• 批准号: EP/X034674/1
• 负责人: Jon Heffernan
• 金额: $ 61.52万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FX034674%2F1
• 关键词: Underpinning; Equipment; Enhancing; Semiconductor; Characterisation

The National Epitaxy Facility requires equipment to upgrade its scientific capabilities and to improve the efficiency of the facility in meeting user needs.The facility will install a new cryostat that will allow the mounting of full epitaxial wafers up to 3" in diameter. The cryostat will be combined with existing equipment in the facility to create a low temperature Photoluminescence (PL) mapping system capable of producing PL maps over the full 3" wafer, with spatial resolution down to the micron level. In addition, we will install a time-resolved photon counting system to allow for both CW and time-resolved mapping of emission characteristics over full wafers.The equipment will improve the efficiency of the epitaxy service provided by the National Epitaxy Facility by increasing the range and quality of characterisation data available to us and allowing cryogenic wafer mapping to be done in a single run, instead of multiple runs on small cleaved samples.New scientific capabilities will also be enabled , particularly in areas such as manufacturing research where detailed information on spatial variations across epitaxial wafers is of critical importance.

国家外延设施需要设备来升级其科学能力并提高设施的效率，以满足用户需求。该设施将安装一个新的低温恒温器，该低温恒温器将允许安装直径达 3 英寸的完整外延晶圆。该低温恒温器将与该设施中的现有设备相结合，创建一个低温光致发光 (PL) 绘图系统，能够在整个 3 英寸晶圆上生成 PL 图， 空间分辨率低至微米级。此外，我们将安装时间分辨光子计数系统，以实现全晶圆发射特性的连续波和时间分辨映射。该设备将通过增加我们可用的表征数据的范围和质量，并允许在单次运行中完成低温晶圆映射，而不是在小切割样品上多次运行，从而提高国家外延设施提供的外延服务的效率。新的科学能力 还将启用，特别是在制造研究等领域，其中有关外延晶圆空间变化的详细信息至关重要。