Atomistic anatomy of a nano transistor

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The high-speed and low-power requirements of state-of-the-art transistors are met by material control that has reached an unprecedented level. The material in a nano-device has drastically different characteristics than in the bulk. To achieve this, the industry needs to implement strain, ultra sharp junctions, and well controlled potential profiles all on the nanometre scale. This project aims to develop a technique to directly measure these properties in an actual device. Electrical and optical atom tomography will make it possible to map device parameters on the atomic scale. This atomistic anatomy has the potential to revolutionise the development of nanoscale devices and grow into a tool for a multi-billion dollar industry.