Atomistic anatomy of a nano transistor

纳米晶体管的原子解剖

• 批准号: DP150103699
• 负责人: Prof Sven Rogge
• 金额: $ 24.84万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP150103699
• 关键词: Atomistic; anatomy; nano; transistor

The high-speed and low-power requirements of state-of-the-art transistors are met by material control that has reached an unprecedented level. The material in a nano-device has drastically different characteristics than in the bulk. To achieve this, the industry needs to implement strain, ultra sharp junctions, and well controlled potential profiles all on the nanometre scale. This project aims to develop a technique to directly measure these properties in an actual device. Electrical and optical atom tomography will make it possible to map device parameters on the atomic scale. This atomistic anatomy has the potential to revolutionise the development of nanoscale devices and grow into a tool for a multi-billion dollar industry.

材料控制达到了前所未有的水平，满足了最先进晶体管的高速和低功耗要求。纳米器件中的材料与整体中的材料具有截然不同的特性。为了实现这一点，该行业需要在纳米尺度上实现应变、超尖锐连接和良好控制的势能分布。该项目旨在开发一种在实际设备中直接测量这些特性的技术。电子和光学原子断层成像将使绘制原子尺度上的设备参数成为可能。这种原子解剖结构有可能彻底改变纳米设备的开发，并成长为一个价值数十亿美元的行业的工具。