Atomistic anatomy of a nano transistor

纳米晶体管的原子解剖

• 批准号: DP150103699
• 负责人: Prof Sven Rogge
• 金额: $ 24.84万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP150103699
• 关键词: Atomistic; anatomy; nano; transistor

The high-speed and low-power requirements of state-of-the-art transistors are met by material control that has reached an unprecedented level. The material in a nano-device has drastically different characteristics than in the bulk. To achieve this, the industry needs to implement strain, ultra sharp junctions, and well controlled potential profiles all on the nanometre scale. This project aims to develop a technique to directly measure these properties in an actual device. Electrical and optical atom tomography will make it possible to map device parameters on the atomic scale. This atomistic anatomy has the potential to revolutionise the development of nanoscale devices and grow into a tool for a multi-billion dollar industry.

最先进的晶体管的高速和低功率要求通过达到前所未有的水平的材料控制来满足。纳米设备中的材料的特征与大容量截然不同。为了实现这一目标，该行业需要在纳米量表上实施应变，超尖端连接和受控良好的潜在概况。该项目旨在开发一种直接测量实际设备中这些属性的技术。电气和光原子断层扫描将使在原子尺度上绘制设备参数成为可能。这种原子解剖结构有可能彻底改变纳米级设备的开发，并成长为数十亿美元行业的工具。