课题基金 / 基金详情

Nanostructured Bismuth Telluride Thin Films - Advancing the Capability of Thermoelectric Materials

Nanostructured Bismuth Telluride Thin Films - Advancing the Capability of Thermoelectric Materials
纳米结构碲化铋薄膜 - 提高热电材料的性能
批准号:
ST/L003376/1
负责人:
G Reid
金额:
$11.05万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2014
资助国家:
英国
项目状态:
已结题
起止时间:
2014 至 --

项目摘要

项目成果

G Reid的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
Thermoelectric (TE) materials can be used to convert thermal energy into electricity. Their properties are based on one of two phenomena, the Seebeck effect (for power generation) and the Peltier effect (for electronic cooling or heating). A TE device is formed when an n-type doped material is connected electrically in series and thermally in parallel across a temperature differential to a p-type doped material, so that current flows between the two. TE generators have a number of very favourable features as they offer solid-state operation, have no mechanical parts that can wear out, require little maintenance, have long lifetimes, produce zero emissions and are compact compared with heat engines. Despite this, currently they are used only in niche applications because of the low thermoelectric efficiency of the existing materials. Solid state TE devices offer a promising route to efficient and sustainable electrical power harvesting from low grade waste heat produced in internal combustion engines, and in energy-intensive industrial processes, for example refineries and glass furnaces. For low temperature waste heat and natural heat sources, there is no competing technology, thus a huge opportunity exists. However, key barriers need to be overcome in order to make the application of TEs in these areas practicable, particularly to increase the thermoelectric efficiency and reduce the material volume required to create functional TE devices. Nanostructuring TE materials can lead to very significant increases in efficiency (due to both quantum confinement effects and reductions in lattice thermal conductivity). An important target, therefore, is the development of low-cost methods by which nanostructured thermoelectric materials can be produced.Bismuth telluride, Bi2Te3, is a narrow band gap semiconductor whose alloys are commonly used in commercial TE devices as they have among the best room temperature thermoelectric properties of known bulk materials. It has been demonstrated that nanostructuring of thermoelectric materials can lead to significant increases in efficiency. A key current limitation at present is in achieving precise spatial control of material growth, morphology and orientation on the nanoscale. Under a project funded by STFC we have developed a novel single source chemical vapour deposition (CVD) reagent and method that significantly enhances the ability to deposit high quality thin films of Bi2Te3 TEMs with very high area selectivity onto micropatterned surfaces. This application is focussed on achieving key milestones to establish the commercial potential of this deposition method, with the target of increasing the thermoelectric figure of merit (ZT) to ca. 2, which would mean energy harvesting from industrial plants would be achievable.
期刊论文(8)
专著(0)
科研奖励(0)
会议论文
DOI: 10.1039/c4ta00341a
发表时间: 2014-03
期刊: Journal of Materials Chemistry
影响因子: --
作者: [Sophie L. Benjamin;C. K. de Groot;Chitra Gurnani;Andrew L. Hector;R. Huang;E. Koukharenko;W. Levason;G. Reid]
通讯作者: Sophie L. Benjamin;C. K. de Groot;Chitra Gurnani;Andrew L. Hector;R. Huang;E. Koukharenko;W. Levason;G. Reid
DOI: 10.1016/j.jallcom.2020.156523
发表时间: 2020-08
期刊: Journal of Alloys and Compounds
影响因子: 6.2
作者: [Daniel W. Newbrooka;Stephen P. Richardsb;Victoria K. Greenacreb;A. Hectorb;W. Levasonb;Gillian Reidb-Gillian-Reid]
通讯作者: Daniel W. Newbrooka;Stephen P. Richardsb;Victoria K. Greenacreb;A. Hectorb;W. Levasonb;Gillian Reidb-Gillian-Reid
DOI: 10.1039/c4tc02327g
发表时间: 2015-01-01
期刊: JOURNAL OF MATERIALS CHEMISTRY C
影响因子: 6.4
作者: [Benjamin, S. L., de Groot, C. H., Reid, G.]
通讯作者: Reid, G.
Niobium(V) and tantalum(V) halide chalcogenoether complexes--towards single source CVD precursors for ME2 thin films.
铌 (V) 和钽 (V) 卤化物硫族醚络合物——面向 ME2 薄膜的单一来源 CVD 前驱体。
DOI: 10.1039/c4dt02694b
发表时间: 2014
期刊: 2003)
影响因子: --
作者: [Benjamin SL]
通讯作者: Benjamin SL
2D Layered Transition Metal Dichalcogenide Semiconductors via Non-Aqueous Electrodeposition
  • 批准号:
    EP/P025137/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $101.91万
  • 财政年份:
    2017
  • 负责人:
    G Reid
  • 依托单位:
Selective Chemical Vapour Deposition for Production of Thermoelectric Micro-Generators for Energy Harvesting
  • 批准号:
    ST/P00007X/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $46.27万
  • 财政年份:
    2016
  • 负责人:
    G Reid
  • 依托单位:
Phase Change Memory Materials via Non-Aqueous Electrodeposition into Nano-structured Templates
  • 批准号:
    EP/I010890/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $116.82万
  • 财政年份:
    2011
  • 负责人:
    G Reid
  • 依托单位:
Matterials Matter!: Nanocatalysts and sustainable production
  • 批准号:
    RES-168-26-0070
  • 项目类别:
    Research Grant
  • 资助金额:
    $0.23万
  • 财政年份:
    2007
  • 负责人:
    G Reid
  • 依托单位:
海外基金