MBE growth of high quality single Quantum Dots.

高品质单量子点的 MBE 生长。

• 批准号: 1907564
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1907564
• 关键词: MBE; growth; quality; single; Quantum

"Indium Arsenide self assembled quantum dots are one of the most promising candidates for use as qbits in quantum information processing. Whilst excellent results have been achieved on single quantum dots, scalability to more complex device requires accurate control over both the spatial position and emission wavelength. This will be achieved through electron beam lithography and patterning of semiconductor surfaces and subsequent growth of quantum dots in nanoholes. Detailed studies of the processing parameters and their effects on the optical quality, controllability and reproducibility of qyantum dots and device structures will be investigated."

砷化铟自组装量子点是量子信息处理中最有希望用作量子位的候选之一。虽然在单个量子点上已经取得了出色的结果，但要想扩展到更复杂的器件，需要精确控制空间位置和发射波长。这将通过电子束光刻和半导体表面的图案化以及随后在纳米洞中生长量子点来实现。我们将详细研究工艺参数及其对量子点和器件结构的光学质量、可控性和重现性的影响。