Graphene and boron nitride molecular hybrid electrical devices

石墨烯和氮化硼分子混合电子器件

• 批准号: 1940671
• 金额: --
• 依托单位: University of Nottingham
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1940671
• 关键词: Graphene; boron; nitride; molecular; hybrid

The focus of study will be heterostructures formed by boron nitride and graphene which are grown using a newly installed molecular beam epitaxy (MBE) system. The PhD student will initially focus on the understanding of graphene growth on a variety of substrates using, primarily, high resolution ambient atomic force microscopy with additional opportunities for sample characterisation using Raman spectroscopy, electron microscopy and X-ray photoelectron spectroscopy. Graphene grown using the new MBE system will be used for a series of experiments, for example using epitaxial tunnel devices in which a boron nitride (BN) barrier is grown between two graphene layers. There will also be the opportunity to investigate molecular hybrid devices. A simple approach will be to investigate the bridging of gaps in graphene on the 1-10 nm scale by single molecules and polymer strands including strongly emitting dye molecules such as porphyrins. These devices will be investigated using electrical measurements, including at low temperature, and electroluminescence spectroscopy. The student will also be encouraged to explore related topics such as scanning tunnelling microscopy and low temperature atomic force microscopy.

研究的重点将是使用新安装的分子束外延（MBE）系统生长的氮化硼和石墨烯形成的异质结构。博士生将首先专注于使用各种衬底上的石墨烯生长的理解，主要是，高分辨率环境原子力显微镜与使用拉曼光谱，电子显微镜和X射线光电子能谱的样品表征的额外机会。使用新的MBE系统生长的石墨烯将用于一系列实验，例如使用外延隧道器件，其中氮化硼（BN）阻挡层生长在两个石墨烯层之间。也将有机会研究分子混合装置。一种简单的方法将是研究通过单分子和聚合物链（包括强发射染料分子如卟啉）在1 - 10 nm尺度上桥接石墨烯中的间隙。这些设备将使用电气测量，包括在低温下，和电致发光光谱进行研究。还将鼓励学生探索相关主题，如扫描隧道显微镜和低温原子力显微镜。