Design and construction of a large-area hot filament reactor suitable for deposition of diamond films directly onto GaN substrates

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This PhD is aligned with the Program grant (PI Martin Kuball, Physics) with the aim of developing diamond-on-GaN technology for next generation power devices. It is funded by the University of Bristol's EPSRC DTA quota as part of their commitment to support the overall Programme grant.The student will work alongside a PDRA (whose remit is to develop new technologies to grow diamond directly on to GaN substrates), and develop methods and procedures to scale up this technology from substrates that are ~1sq.cm in size to 6"-diameter wafers common in the semiconductor industry. The student's main goal will be to modify an existing deposition reactor such that it can accept 6"-wafers, and to redesign the filament and power system such that diamond films will be deposited uniformly across these wafers.Some of the project will also involve scaling up of the seeding process, which currently uses a home-built electrospray apparatus. This will also be modified for larger-area substrates. Some preliminary seeding a deposition experiments will be undertaken on a range of novel substrates and materials, such as black Si needles, to fully understand the operating parameters.The student will be trained on various characterisation facilities, such as SEM, Raman, 4-point probe, as well as vacuum engineering.