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2D monolayers enabling next generation III- V devices

2D monolayers enabling next generation III- V devices
2D 单层使下一代 III-V 器件成为可能
批准号:
1944366
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2017
资助国家:
英国
项目状态:
已结题
起止时间:
2017 至 --

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中文摘要
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英文摘要
The efficiency of solar cells incorporating metal halide perovskites has developed rapidly over recent years. However, device performance, stability and longevity are still limited by unresolved electronic and ionic processes both within the perovskite and at electronic interfaces. These processes provide one of the final barriers to commercialisation. By engineering the interfaces between perovskites and 2D materials within optoelectronic devices, this project aims to investigate and overcome degradation processes and power losses to achieve high performance solar cells with improved operational stability.
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