DMREF: III-nitride Monolayers and Extreme Quantum Dots

DMREF：III族氮化物单层和极端量子点

• 批准号: 2118809
• 负责人: Zetian Mi
• 金额: $ 180万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-10-01 至 2025-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2118809&HistoricalAwards=false
• 关键词: DMREF; III; nitride; Monolayers; Extreme

Nontechnical DescriptionThe project will serve the Materials Genome Initiative by creating a new family of nano-quantum materials (nQMs) that are confined down to a few atoms. In partnership with Sandia National Labs and Air Force Research Lab, the research will establish a nQM platform with unique quantum functionalities by using the most accurate quantum theory to design the quantum optoelectronic properties of nQMs. The nQMs will establish a unique controllably interacting semiconductor qubit platform needed for quantum information science application, including the possibility to control many-body states in two-dimensional (2D) materials. The project will develop ordered extreme quantum dots (XQD) arrays with state-of-the-art growth and metrology facilities. The research breakthroughs have the potential to dramatically enhance the efficiency AlGaN-based deep UV LEDs. This would create the much-needed technology for replacing conventional mercury lamps in water and air purification as well as sterilization, thereby eliminating mercury emissions and significantly reducing electricity consumption. The highly interdisciplinary nature and the appealing potential social impacts of the research will be leveraged to encourage underrepresented minorities and women in careers in science and engineering. At the same time, the research will provide opportunity to involve undergraduate students in frontier research. Through the popular “Saturday Morning Physics” public lecture series at the University of Michigan, the project will educate the broader public on quantum science and technology.Technical DescriptionThe focused theory-epitaxy-characterization-quantum optoelectronics collaborative research will develop a systematic quantum theory that integrates three first-principles methods, including Density-Functional Theory, Many-Body Perturbation Theory, and Quantum-Dynamic Cluster Expansion, to precisely predict and determine the electronic, optical, excitonic, and entanglement properties of III-nitride quantum nanostructures. The presence of disorder and spectral diffusion, deleterious effects that plague conventional quantum dots, will be addressed by i) deterministically growing and positioning XQDs on hBN whose atomically smooth surface eliminates any interface interdiffusion and disorder, and ii) creating interface excitons with well-aligned dipole and with emission wavelengths largely determined by the intrinsic band alignment of hBN/AlN. The combination of deterministic position, size, and type of excitons within XQD qubits provides a new level of flexibility to adjust quantum-light emission as well as qubit–qubit and XQD–2D exciton interactions by orders of magnitude. The research will combine deep-UV time-resolved photoluminescence spectroscopy and differential transmission spectroscopy to demonstrate controllable XQD–XQD coupling as well as the controlled formation of direct and indirect excitons, biexcitons, and dropletons at room temperature. The realization of controllably interacting qubits with III-nitride nQMs will establish the detection, source, and processing of entanglement on a common semiconductor platform that has a known and established industrial-level scalability. Furthermore, the potential of the nQMs platform will be demonstrated by taking key steps toward extraordinary quantum optoelectronic devices, including deep UV light emitters and coupled XQD systems.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性描述该项目将通过创建一个新的纳米量子材料（nQMs）家族来服务于材料基因组计划，这些材料被限制在几个原子内。该研究将与桑迪亚国家实验室和空军研究实验室合作，通过使用最精确的量子理论来设计nQM的量子光电特性，建立具有独特量子功能的nQM平台。nQM将建立量子信息科学应用所需的独特可控相互作用半导体量子位平台，包括控制二维（2D）材料中多体状态的可能性。该项目将开发具有最先进的生长和计量设施的有序极端量子点（XQD）阵列。这些研究突破有可能大大提高AlGaN基深紫外LED的效率。这将创造出急需的技术，用于取代水和空气净化以及消毒中的传统汞灯，从而消除汞排放并大幅减少电力消耗。该研究的高度跨学科性质和吸引人的潜在社会影响将被用来鼓励代表性不足的少数民族和妇女从事科学和工程职业。同时，该研究将为本科生参与前沿研究提供机会。该项目将通过在密歇根大学举办的“周六早晨物理学”公开讲座系列，向公众普及量子科学和技术。技术描述该项目的重点是理论-外延-表征-量子光电子学合作研究，将发展一个系统的量子理论，该理论集成了三个第一性原理方法，包括密度泛函理论，多体微扰理论和量子动力学团簇扩展，精确预测和确定III族氮化物量子纳米结构的电子，光学，激子和纠缠特性。无序和光谱扩散的存在，困扰传统量子点的有害影响，将通过以下方式解决：i）在hBN上确定性地生长和定位XQD，其原子光滑表面消除了任何界面相互扩散和无序，以及ii）产生具有良好对准的偶极子的界面激子，并且发射波长主要由hBN/AlN的固有能带对准确定。XQD量子位内激子的确定性位置、大小和类型的组合提供了新的灵活性水平，以按数量级调整量子光发射以及量子位-量子位和XQD-2D激子相互作用。该研究将结合联合收割机深紫外时间分辨光致发光光谱和差分透射光谱，以证明可控的XQD-XQD耦合以及在室温下直接和间接激子，双激子和液滴的可控形成。实现与III族氮化物nQM的可控相互作用量子位将在具有已知和已建立的工业级可扩展性的通用半导体平台上建立纠缠的检测、源和处理。此外，nQMs平台的潜力将通过向非凡的量子光电器件（包括深紫外光发射器和耦合XQD系统）迈出关键步骤来展示。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估而被认为值得支持。

项目成果

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

• DOI: 10.1073/pnas.2303473120
• 发表时间: 2023-09-12
• 期刊: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
• 影响因子: 11.1
• 作者: Wu，Yuanpeng;Zhou，Peng;Mi，Zetian
• 通讯作者: Mi，Zetian

Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications

• DOI: 10.1063/5.0145931
• 发表时间: 2023-04
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Yuanpeng Wu;Ping Wang;Woncheol Lee;A. Aiello;P. Deotare;Theodore Norris;P. Bhattacharya;M. Kira

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

控制纳米级 AlN 缺陷的形成：实现超宽带隙半导体的高效电流传导

• DOI: 10.1002/aelm.202000337
• 发表时间: 2020
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: Wu, Yuanpeng;Laleyan, David A.;Deng, Zihao;Ahn, Chihyo;Aiello, Anthony F.;Pandey, Ayush;Liu, Xianhe;Wang, Ping;Sun, Kai;Ahmadi, Elaheh
• 通讯作者: Ahmadi, Elaheh

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

利用巨带隙重正化在石墨烯上可规模化合成单层六方氮化硼

• DOI: 10.1002/adma.202201387
• 发表时间: 2022
• 期刊: Advanced Materials
• 影响因子: 29.4
• 作者: Wang, Ping;Lee, Woncheol;Corbett, Joseph P.;Koll, William H.;Vu, Nguyen M.;Laleyan, David Arto;Wen, Qiannan;Wu, Yuanpeng;Pandey, Ayush;Gim, Jiseok
• 通讯作者: Gim, Jiseok

Epitaxial hexagonal boron nitride with high quantum efficiency

• DOI: 10.1063/5.0142242
• 发表时间: 2023-05
• 期刊: APL Materials
• 影响因子: 6.1
• 作者: D. Laleyan;Woncheol Lee;Ying Zhao;Yuanpeng Wu;Ping Wang;Jun Song;E. Kioupakis;Z. Mi