Developing Precursors for the Electrodeposition of Early Metal Chalcogenide Semiconductors
Developing Precursors for the Electrodeposition of Early Metal Chalcogenide Semiconductors
批准号:
1946877
负责人:
金额:
$0.0万
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2017
资助国家:
英国
项目状态:
已结题
起止时间:
2017 至 --
中文摘要
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英文摘要
Transition metal dichalcogenides (TMDCs) are inorganic materials of formula ME2 (M = metal; E = chalcogen = sulfur, selenium or tellurium). They form 2-dimensional layered hexagonal structures related to that of cadmium diiodide, in which the metal-chalcogen bonding within the layers is very strong, whilst that between the layers is much weaker (van der Waals interactions) - i.e. inorganic analogues of graphite.This project will develop new single source precursors that can act as the source of both the metal and the chalcogen for the electrodeposition of 2D layered TMDC thin films. Our priorities are to demonstrate electrodeposition of ME2 with good control of the M:E ratio present in the deposited films and their morphology. We will benchmark their functional properties (electrical and magnetic).
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
Pentagonal bipyramidal complexes of WOCl4 and WSCl4 with diphosphine and diarsine ligands
WOCl4 和 WSCl4 与二膦和二胂配体的五角双锥体配合物
DOI:
10.1016/j.poly.2020.114372
发表时间:
2020
期刊:
Polyhedron
影响因子:
2.6
作者:
[Levason W]
通讯作者:
Levason W
DOI:
10.1016/j.poly.2019.01.044
发表时间:
2019-04-01
期刊:
POLYHEDRON
影响因子:
2.6
作者:
[Greenacre, Victoria K., Hector, Andrew L., Sutcliffe, Laura]
通讯作者:
Sutcliffe, Laura
海外基金