Developing Precursors for the Electrodeposition of Early Metal Chalcogenide Semiconductors

过渡金属二硫属化物（TMDC）是式ME 2（M =金属; E =硫属元素=硫、硒或碲）的无机材料。它们形成与二碘化镉相关的二维层状六方结构，其中层内的金属-硫属元素键合非常强，而层与层之间的能量要弱得多（货车范德瓦尔斯相互作用）-即石墨的无机类似物。该项目将开发新的单源前体，其可以作为2D层状TMDC电沉积的金属和硫属元素的来源薄膜我们的首要任务是证明ME 2的电沉积，并良好地控制沉积膜中存在的M：E比及其形态。我们将对它们的功能特性（电和磁）进行基准测试。

Transition metal dichalcogenides (TMDCs) are inorganic materials of formula ME2 (M = metal; E = chalcogen = sulfur, selenium or tellurium). They form 2-dimensional layered hexagonal structures related to that of cadmium diiodide, in which the metal-chalcogen bonding within the layers is very strong, whilst that between the layers is much weaker (van der Waals interactions) - i.e. inorganic analogues of graphite.This project will develop new single source precursors that can act as the source of both the metal and the chalcogen for the electrodeposition of 2D layered TMDC thin films. Our priorities are to demonstrate electrodeposition of ME2 with good control of the M:E ratio present in the deposited films and their morphology. We will benchmark their functional properties (electrical and magnetic).