Novel transfer printing techniques for fabrication of III-nitride semiconductor devices.

用于制造 III 族氮化物半导体器件的新型转移印刷技术。

• 批准号: 1959222
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1959222
• 关键词: Novel; transfer; printing; techniques; fabrication

This project aims to develop novel transfer printing techniques to enable the fabrication of flexible III-nitride optoelectronic devices such as visible LEDs and lasers. The work will involve developing lift-off processes using stressor layers deposited on the surface of III-nitride materials and embedded strain engineered layers to separate the active region from the growth substrate enabling transfer printing. Transfer printing processes will be developed by applying smart stamp designs to improve the utility and yield of the transfer printing process to enable novel optoelectronic devices to be manufactured. The applications of this research are in developing new visible light LEDs to be applied in areas such as display technology.

该项目旨在开发新型转印技术，以制造柔性III族氮化物光电器件，如可见光LED和激光器。这项工作将涉及开发剥离工艺，使用沉积在III族氮化物材料表面上的应力层和嵌入式应变工程层将有源区与生长衬底分离，从而实现转印。将通过应用智能印模设计来开发转印工艺，以提高转印工艺的实用性和产量，从而能够制造新型光电器件。这项研究的应用是开发新的可见光LED，应用于显示技术等领域。