Design, fabrication and characterisation of arrays of low-voltage, non-volatile, III-V memories

静态随机存取存储器（SRAM）、动态随机存取存储器（DRAM）和闪存具有互补的特性，使它们分别非常适合它们在高速缓存、主动存储器和数据存储中的专门角色。然而，“通用存储器”的概念结合了每种存储器的最佳特性，即快速、低电压、廉价、非易失性、非破坏性读取和高耐久性，一直是工业和学术研究界的长期愿望。该项目将延续最近的工作，其中在室温下演示了具有非破坏性读取的大规模（10微米特征尺寸）非易失性III-V存储单元的操作。目标是评估存储单元在不同架构（例如NAND闪存、NOR闪存和RAM）中的适用性，并设计、制造和封装大规模（10微米特征尺寸）存储单元的小阵列（2 x 2和4 x 4）。

Static random access memory (SRAM), dynamic random access memory (DRAM) and Flash have complementary characteristics that make them well suited to their specialised roles in cache, active memory and data storage, respectively. Nevertheless, the concept of a 'universal memory' that combines the best features of each, i.e. fast, low-voltage, cheap, non-volatile, non-destructive read and high endurance has been a long-standing aspiration of the industrial and academic research communities. This project will follow on from very recent work in which the operation of large-scale (10 micron feature size) non-volatile III-V memory cells with non-destructive read was demonstrated at room-temperature. The objective will be to assess the suitability of the memory cells for implementation in different architectures (e.g. NAND Flash, NOR Flash and RAM), and to design, fabricate and characterise small arrays (2 x 2 and 4 x 4) of large-scale (10 micron feature size) memory cells.