Charge and spin nonlocal interaction in SiGe hybrid cQED architecture

SiGe 混合 cQED 架构中的电荷和自旋非局域相互作用

基本信息

项目摘要

in the fiscal year FY2015, the main workload was devoted to the development of the device fabrication. Difficulties where unfortunately encountered in the fabrication of the quantum dots. However, the fabrication and characterization of the superconducting resonators went as planned. We succeeded in realizing resonators with quality factors of around 30000, which is one order of magnitude larger than the one realized in GaAs, demonstrating one of the advantages of using SiGe as a two-dimensional gas heterostructure for our hybrid cQED architecture. As a side work, we studied in detail the the influence of the dynamics of the nuclear spins of the host material on the dephasing of an electronic spin in GaAs (containing 100% of nuclear spins) on short time scales. This work has important implications for the current project : when we will couple an electronic spin in SiGe (interacting with 4.8% of nuclear spins) to photons, the typical interaction time scale will be even shorter, leading to longer coherence times than anticipated and opening the possibility to study the nuclear spins dynamics on even shorter time scales.
在2015财年,主要工作量致力于器件制造的开发。在量子点的制造中不幸遇到了困难。然而,超导谐振器的制造和表征按计划进行。我们成功地实现了谐振器的品质因数约为30000,这是一个数量级大于GaAs中实现的,展示了使用SiGe作为我们的混合cQED架构的二维气体异质结构的优势之一。作为一个附带的工作,我们详细研究了在短时间尺度上的主体材料的核自旋的动力学的GaAs(包含100%的核自旋)的电子自旋的退相的影响。这项工作对当前的项目具有重要意义:当我们将SiGe中的电子自旋(与4.8%的核自旋相互作用)耦合到光子时,典型的相互作用时间尺度将更短,导致比预期更长的相干时间,并打开了在更短时间尺度上研究核自旋动力学的可能性。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Coherence of spin qubits measured faster than the decorrelation time of their environment
自旋量子位的相干性测量速度快于其环境的去相关时间
  • DOI:
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    0
  • 作者:
    M. R. Delbecq;T. Nakajima;P. Stano;T. Otsuka;S. Amaha;J. Yoneda;K. Takeda;G. Allison;A. Ludwig;A. D. Wieck;S. Tarucha;M.R. Delbecq
  • 通讯作者:
    M.R. Delbecq
Enhanced coherence time of spin qubits in GaAs by fast measurements
通过快速测量增强砷化镓中自旋量子位的相干时间
  • DOI:
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    0
  • 作者:
    M. R. Delbecq;T. Nakajima;P. Stano;T. Otsuka;S. Amaha;J. Yoneda;K. Takeda;A. Noiri;G. Allison;A. Ludwig;A. D. Wieck and S. Tarucha
  • 通讯作者:
    A. D. Wieck and S. Tarucha
Quantum Dephasing in a Gated GaAs Triple Quantum Dot due to Nonergodic Noise
  • DOI:
    10.1103/physrevlett.116.046802
  • 发表时间:
    2016-01-26
  • 期刊:
  • 影响因子:
    8.6
  • 作者:
    Delbecq, M. R.;Nakajima, T.;Tarucha, S.
  • 通讯作者:
    Tarucha, S.
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