Monolithic Microwave Integrated Circuit (MMIC) design, fabrication and characterisation for 5G telecommunication application using GaN

使用 GaN 的 5G 电信应用的单片微波集成电路 (MMIC) 设计、制造和表征

• 批准号: 1802374
• 金额: --
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1802374
• 关键词: Monolithic; Microwave; Integrated; Circuit; MMIC

IntroductionWith the prolific demand for ever increasing wireless data capacity coming from emerging technologies such as 4Kvideo streaming, it is predicted that 4G wireless networks will begin experiencing congestion around 2020 [1]. Thiswill require a shift in to the millimetre wave band that 5G technology must accomplish.AimThe aim of this research is to identify, characterise, design, fabricate and experimentally validate GaN basedsemiconductor components suitable for integration in to 5G base-station (and/or mobile) transceiver solutions.These components must fully meet the technical performance requirements of future 5G networks.Objectives1.) (a) With the aid of case studies of 5G use-cases, the system architecture and sub-circuit blocks of a 5G front endare to be identified. (b) Requirements for all MMIC components should be based on but not limited to systemefficiency requirements; bias voltage selection for active device power requirements; transmit and receivepower-amplifier gain to achieve the signal coverages required by 5G networks; amplifier/mixer bandwidth tofacilitate > 1 Gbs-1 data-rates; identification of a suitable carrier frequency and device technology to implementlocal oscillators with high Q-factors and spectral purity; Generation of thermal dissipation requirementspermitting identification of the substrate and IC packaging technology implemented.2.) (a) Utilise analytics and circuit/EM modelling to qualitatively characterise the individual MMIC GaN active andpassive devices and predict their performance when integrated in to a 5G transceiver (b) Fabrication andexperimental validation of the individual components such that representative models of the GaN devices canbe generated for use in the design of the 5G transceiver within AWR Microwave Office (or ADS).3.) (a) Complete the design of a 5G transceiver based on the system architecture developed in Objective 1.a and themodels generated in Objective 2.b. Mitigate the expected degradation in performance by EM simulation bondwire parasitic reactance. (b) Complete a final EM analysis to provide the best prediction of system performancebefore fabrication. This is to ensure the requirements in Objective 1.b have been met and to increase theprobability of a first-pass successful design. (c) Fabricate and validate the performance of the MMIC wafers. (d)Package the individual MMICs and validate their performance ensuring agreement with the Objective 3.b.4.) Perform an experimental study of the final MMIC design for a 5G use-case to demonstrate in particular > 1 Gbs-1 data-rates.Intended OutcomesIt is intended that accomplishment of the objectives listed and thus the aim of the research will result in thesuccessful demonstration of a 5G transceiver capable of both transmitting and receiving high bandwidth (> 1 Gbs-1)data in circumstances analogous to the predicted use-cases of 5G networks. The qualitative device modellingachieved through analytics and simulation (0bjective 2) should be in agreement with the data collected fromexperimental validation of the fabricated MMIC device(s) (Objective 3). This will serve as confirmation of the designphilosophy of the MMIC device(s) such that it can be presented to the engineering community or any industrialpartners as a blueprint for the development of future 5G devices.

随着4K视频流等新兴技术对无线数据容量的巨大需求，预计4G无线网络将在2020年左右开始出现拥塞[1]。这将需要转移到5G技术必须完成的毫米波段。本研究的目的是识别、表征、设计、制造和实验验证适合集成到5G基站(和/或移动)收发器解决方案中的基于GaN的半导体组件。这些组件必须完全满足未来5G网络的技术性能要求。(A)借助5G用例的案例研究，确定5G前端的系统架构和子电路块。(B)所有MMIC组件的要求应基于但不限于：系统效率要求；有源器件功率要求的偏置电压选择；实现5G网络所需信号覆盖的发射和接收功率放大器增益；促进&gt；1 GBS-1数据速率的放大器/混频器带宽；确定合适的载波频率和器件技术，以实现具有高Q因数和频谱纯度的本地振荡器；产生散热要求，以允许识别衬底和IC封装技术。(A)利用分析和电路/EM建模来定性地描述单个MMIC GaN有源和无源器件，并预测它们在集成到5G收发器中时的性能。(B)制造和实验验证各个组件，以便能够生成GaN器件的代表性模型，用于AWR微波办公室(或ADS)内的5G收发器的设计。(A)根据目标1.a中开发的系统架构和目标2.b中生成的模型，完成5G收发器的设计。通过EM模拟焊线寄生电抗缓解预期的性能下降。(B)在制造之前完成最后的EM分析，以提供对系统性能的最佳预测。这是为了确保满足目标1.b中的要求，并增加首次通过成功设计的概率。(C)制造并验证MMIC晶片的性能。(D)将单个MMIC打包并确认其性能，以确保符合目标3.b.4。)对5G使用案例的最终MMIC设计进行实验研究，以特别演示&gt；1 GBS-1数据速率。介绍的结果旨在实现列出的目标，从而使5G收发器能够在类似于预测的5G网络使用案例的情况下成功演示能够发送和接收高带宽(&gt；1 GBS-1)数据的5G收发器。通过分析和模拟获得的定性器件模型(目标2)应该与从制造的MMIC器件的实验验证中收集的数据(S)(目标3)一致。这将确认MMIC设备(S)的设计理念，以便它可以作为未来5G设备开发的蓝图提交给工程界或任何行业合作伙伴。