Monolithic Microwave Integrated Circuit (MMIC) design, fabrication and characterisation for 5G telecommunication application using GaN

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IntroductionWith the prolific demand for ever increasing wireless data capacity coming from emerging technologies such as 4Kvideo streaming, it is predicted that 4G wireless networks will begin experiencing congestion around 2020 [1]. Thiswill require a shift in to the millimetre wave band that 5G technology must accomplish.AimThe aim of this research is to identify, characterise, design, fabricate and experimentally validate GaN basedsemiconductor components suitable for integration in to 5G base-station (and/or mobile) transceiver solutions.These components must fully meet the technical performance requirements of future 5G networks.Objectives1.) (a) With the aid of case studies of 5G use-cases, the system architecture and sub-circuit blocks of a 5G front endare to be identified. (b) Requirements for all MMIC components should be based on but not limited to systemefficiency requirements; bias voltage selection for active device power requirements; transmit and receivepower-amplifier gain to achieve the signal coverages required by 5G networks; amplifier/mixer bandwidth tofacilitate > 1 Gbs-1 data-rates; identification of a suitable carrier frequency and device technology to implementlocal oscillators with high Q-factors and spectral purity; Generation of thermal dissipation requirementspermitting identification of the substrate and IC packaging technology implemented.2.) (a) Utilise analytics and circuit/EM modelling to qualitatively characterise the individual MMIC GaN active andpassive devices and predict their performance when integrated in to a 5G transceiver (b) Fabrication andexperimental validation of the individual components such that representative models of the GaN devices canbe generated for use in the design of the 5G transceiver within AWR Microwave Office (or ADS).3.) (a) Complete the design of a 5G transceiver based on the system architecture developed in Objective 1.a and themodels generated in Objective 2.b. Mitigate the expected degradation in performance by EM simulation bondwire parasitic reactance. (b) Complete a final EM analysis to provide the best prediction of system performancebefore fabrication. This is to ensure the requirements in Objective 1.b have been met and to increase theprobability of a first-pass successful design. (c) Fabricate and validate the performance of the MMIC wafers. (d)Package the individual MMICs and validate their performance ensuring agreement with the Objective 3.b.4.) Perform an experimental study of the final MMIC design for a 5G use-case to demonstrate in particular > 1 Gbs-1 data-rates.Intended OutcomesIt is intended that accomplishment of the objectives listed and thus the aim of the research will result in thesuccessful demonstration of a 5G transceiver capable of both transmitting and receiving high bandwidth (> 1 Gbs-1)data in circumstances analogous to the predicted use-cases of 5G networks. The qualitative device modellingachieved through analytics and simulation (0bjective 2) should be in agreement with the data collected fromexperimental validation of the fabricated MMIC device(s) (Objective 3). This will serve as confirmation of the designphilosophy of the MMIC device(s) such that it can be presented to the engineering community or any industrialpartners as a blueprint for the development of future 5G devices.