Investigation of noise characteristics of optoelectronic semiconductor materials.

光电半导体材料噪声特性研究。

• 批准号: 2116514
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2116514
• 关键词: Investigation; noise; characteristics; optoelectronic; semiconductor

The research is concerned with the characterisation of impact ionisation behaviour in III-V semiconductor alloys. The project will investigate avalanche multiplication and excess noise in the quarternary alloys AlGaInP and AlGaAsSb, using measurements taken on avalanche photodiode structures to infer information about the characteristics of the materials. Of particular interest is the way in which the impact ionisation coefficients change as the composition of the alloy is varied. The end goals of the research are to determine whether materials may be suitable for the development of next generation low noise, high gain-bandwidth product avalanche photodiodes.

该研究与III-V半导体合金中影响电离行为的特征有关。该项目将使用对雪崩光电二极管结构进行的测量值来推断有关材料特征的信息，研究季四合金Algainp和Algaassb中的雪崩繁殖和过量噪声。特别感兴趣的是随着合金的组成的变化，影响电离系数的变化。该研究的最终目标是确定材料是否适合于下一代低噪声，高增益宽大产品雪崩光电二极管的发展。