Investigation of noise characteristics of optoelectronic semiconductor materials.

光电半导体材料噪声特性研究。

• 批准号: 2116514
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2116514
• 关键词: Investigation; noise; characteristics; optoelectronic; semiconductor

The research is concerned with the characterisation of impact ionisation behaviour in III-V semiconductor alloys. The project will investigate avalanche multiplication and excess noise in the quarternary alloys AlGaInP and AlGaAsSb, using measurements taken on avalanche photodiode structures to infer information about the characteristics of the materials. Of particular interest is the way in which the impact ionisation coefficients change as the composition of the alloy is varied. The end goals of the research are to determine whether materials may be suitable for the development of next generation low noise, high gain-bandwidth product avalanche photodiodes.

这项研究涉及III-V半导体合金中碰撞电离行为的特征。该项目将研究四元合金AlGaInP和AlGaAsSb中的雪崩倍增和过剩噪声，利用对雪崩光电二极管结构的测量来推断有关材料特性的信息。特别令人感兴趣的是冲击电离系数随着合金成分的变化而变化的方式。这项研究的最终目标是确定材料是否适合开发下一代低噪声、高增益带宽的雪崩光电二极管。