Metal oxide films for ultralow energy memristive devices
Metal oxide films for ultralow energy memristive devices
批准号:
2275879
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --
中文摘要
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英文摘要
New ultralow power NVM is central to all aspects of energy efficient, high performance computing. The very broad range of applications requiring high performance NVM are shown in above. The need for higher performance computing is partly driven by the huge amount and continuing huge growth in data storage and movement, which cuts across all industry sectors (medical, transport, communications, entertainment, military, security). Such efficiency cannot come from processing as Moore's law reaches an end and new processor technologies are not yet being established. The biggest performance and energy saving gains will be in memory. Broadly, the PhD project will comprise many important steps, from exploring different materials, to the engineering of compositions and nanostructures, to developing, testing and understanding a range of different memory device forms, to industry liaison/translation on device development.
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