Optical switching based on transition metal oxide thin films

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The proposed NSERC-CRD grant is in collaboration with Cisco Systems, and has the overall goal of synthesizing, characterizing and demonstrating thermally stable metal-oxide thin films with applications in simultaneous optical and electrical switching. Only materials exhibiting electrically and thermally stimulated metal-insulator (MI) transitions (MITs) will be considered as potentially the most interesting. Among these materials, vanadium dioxide (VO2) is one of the most studied and having the established technology. It shows an abrupt MIT which may be induced electrically (by an electric field) and thermally (by temperature change). However, the temperature of this MI transition is only 50 - 70 C, which makes this material vulnerable to temperature fluctuations and prone to unwanted switching. The goal of this CRD is to synthesize a range of materials having electrically and thermally stimulated MIT with higher transition temperatures. The structure has to be stable and the device has to be reliable. During the course of this project the following research will be undertaken: (a) The synthesis of various vanadium oxide thin films by magnetron sputtering. (b) Search and discovery of various vanadium oxide phases. (c) The relationship between fabrication conditions, film composition, structure and properties. (d) The modification of MIT by varying the level of vanadium oxidation. (e) VO2 modification by partial substitution of vanadium by other transition metals. (f) Assessment of thermal stability and usability of thin films in (a) to (e) for MIT for optical switching. The proposed CRD grant builds on the expertise the applicants have in the area of thin films and optical properties. The CRD will generate new advanced knowledge in the area of MIT for optical switching based on transition metal (vanadium) oxides. The results are expected to open the door to the development of a new generation of optical and electrical switches and to have a direct impact in optical communications and microelectronics.