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Transition metal oxide thin films for nanoelectronic applications

用于纳米电子应用的过渡金属氧化物薄膜

基本信息

批准号：
2448279
负责人：
金额：
--
依托单位：
University of Southampton
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2020
资助国家：
英国
起止时间：
2020 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2448279
关键词：
Transition metal oxide thin films

项目摘要

Metal oxide thin films based on transition metals are widely employed in electronic and optoelectronic devices due to their n- and p-type semiconducting properties and ease of fabrication using the well-established complementary metal-oxide semiconductor (CMOS) technology. However, as device miniaturisation has reached its practical limits, new device architectures are intensely sought after to create the next generation of high-performance electronic devices. For instance, the memristor approach allows functions of processing and memory to be merged allowing also for smaller interconnection in circuit design and higher device density. Different metal oxide films will be explored for memristive applications, such as n-type ZnO, p-type CuxO or SnOx. They will be deposited both via sputtering as well as solution processing methods to explore the effect of deposition parameters on the material and thin film properties (e.g. stoichiometry, crystallinity, surface smoothness) and understand how these can be optimised to deliver high performance memristive devices with tunable low-power characteristics. To this end, the standard vertical MIM n- and p-type metal oxide-based devices will be compared with coplanar nanogap separated structures and will be incorporated in 1T1R architectures towards all-oxide CMOS logic. The memristive devices will be then exploited in gas sensing and biosensing applications, as the metal oxide surface can be functionalised with different organic molecules.

基于过渡金属的金属氧化物薄膜由于其n型和p型半导体性质以及使用成熟的互补金属氧化物半导体（CMOS）技术的容易制造而广泛用于电子和光电器件中。然而，随着器件的小型化已经达到其实际极限，人们强烈寻求新的器件架构来创建下一代高性能电子器件。例如，忆阻器方法允许处理和存储器的功能被合并，还允许电路设计中的更小互连和更高的器件密度。不同的金属氧化物膜将被探索用于忆阻应用，诸如n型ZnO、p型CuxO或SnOx。它们将通过溅射和溶液处理方法沉积，以探索沉积参数对材料和薄膜特性（例如化学计量，结晶度，表面光滑度）的影响，并了解如何优化这些参数，以提供具有可调低功耗特性的高性能忆阻器件。为此，标准的垂直MIM n型和p型金属氧化物基器件将与共面纳米间隙分离结构进行比较，并将被纳入1T1R架构，以实现全氧化物CMOS逻辑。然后，忆阻器件将用于气体传感和生物传感应用，因为金属氧化物表面可以用不同的有机分子进行功能化。