Graphene/boron nitride heterostructures: resonant tunnelling at low temperatures and high magnetic field

石墨烯/氮化硼异质结构：低温高磁场下的谐振隧道

• 批准号: 2276086
• 金额: --
• 依托单位: University of Nottingham
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2276086
• 关键词: Graphene; boron; nitride; heterostructures; resonant

Initially, I am studying and characterising the surface features of plasma-assisted MBE-grown hBN/HOPG and Graphene/hBN/HOPG samples using STM and AFM to gain a better understanding of the growth process and properties of these samples. Alongside this, I am also studying a technique of depositing and manipulating multi-wall carbon nanotubes using an AFM to allow the tubes to be connected to microscopic electronic devices and surface features of the previously-noted MBE-grown samples to act as electrical contacts. These contacts can then be used to connect the device/feature to larger, stamped gold contacts, which in turn will allow the electronic properties of the connected device/feature to be measured by measuring I/V curves, photoluminescence, etc.Further down the line, the aim is to use a low-temperature combination-AFM/STM with a magnetic field generator to study the behaviour of MBE-grown graphene/hBN structures/samples in the presence of a magnetic field.

首先，我正在研究和表征等离子体辅助MBE生长的hBN/HOPG和石墨烯/hBN/HOPG样品的表面特征，使用STM和AFM，以更好地了解这些样品的生长过程和性质。除此之外，我还在研究一种使用AFM沉积和操纵多壁碳纳米管的技术，以使这些管连接到微观电子器件和前面提到的MBE生长样品的表面特征，作为电接触。这些触点然后可以用于将器件/特征连接到更大的冲压金触点，这反过来将允许通过测量I/V曲线、光致发光等来测量所连接的器件/特征的电子特性。目的是使用具有磁场发生器的低温组合AFM/STM来研究MBE生长的石墨烯/hBN结构的行为。样品在磁场中的存在。