Graphene/boron nitride heterostructures: resonant tunnelling at low temperatures and high magnetic field

首先，我利用STM和AFM对等离子体辅助分子束外延生长的hBN/HOPG和石墨烯/hBN/HOPG样品的表面特征进行了研究和表征，以更好地了解这些样品的生长过程和性质。此外，我还在研究一种使用原子力显微镜沉积和操纵多壁碳纳米管的技术，使这些管能够连接到微观电子设备和前面提到的分子束外延生长的样品的表面特征，作为电触点。然后可以使用这些触点将设备/特征连接到更大的冲压金触点，这反过来将允许通过测量I/V曲线、光致发光等来测量所连接的设备/特征的电子性质。进一步，目标是使用低温组合-AFM/STM和磁场发生器来研究MBE生长的石墨烯/hBN结构/样品在磁场存在下的行为。

Initially, I am studying and characterising the surface features of plasma-assisted MBE-grown hBN/HOPG and Graphene/hBN/HOPG samples using STM and AFM to gain a better understanding of the growth process and properties of these samples. Alongside this, I am also studying a technique of depositing and manipulating multi-wall carbon nanotubes using an AFM to allow the tubes to be connected to microscopic electronic devices and surface features of the previously-noted MBE-grown samples to act as electrical contacts. These contacts can then be used to connect the device/feature to larger, stamped gold contacts, which in turn will allow the electronic properties of the connected device/feature to be measured by measuring I/V curves, photoluminescence, etc.Further down the line, the aim is to use a low-temperature combination-AFM/STM with a magnetic field generator to study the behaviour of MBE-grown graphene/hBN structures/samples in the presence of a magnetic field.