Graphene/boron nitride heterostructures: resonant tunnelling at low temperatures and high magnetic field

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Initially, I am studying and characterising the surface features of plasma-assisted MBE-grown hBN/HOPG and Graphene/hBN/HOPG samples using STM and AFM to gain a better understanding of the growth process and properties of these samples. Alongside this, I am also studying a technique of depositing and manipulating multi-wall carbon nanotubes using an AFM to allow the tubes to be connected to microscopic electronic devices and surface features of the previously-noted MBE-grown samples to act as electrical contacts. These contacts can then be used to connect the device/feature to larger, stamped gold contacts, which in turn will allow the electronic properties of the connected device/feature to be measured by measuring I/V curves, photoluminescence, etc.Further down the line, the aim is to use a low-temperature combination-AFM/STM with a magnetic field generator to study the behaviour of MBE-grown graphene/hBN structures/samples in the presence of a magnetic field.