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Harnessing the power of topology in oxide electronics for future IT components

利用氧化物电子拓扑的力量来打造未来的 IT 组件

基本信息

批准号：
2285094
负责人：
金额：
--
依托单位：
University of Oxford
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2019
资助国家：
英国
起止时间：
2019 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2285094
关键词：
Harnessing power topology oxide electronics

项目摘要

In spite of its extraordinary success in fuelling the IT revolution, silicon (CMOS) technology is intrinsically not energy-efficient, because it relies on the movement of electrical charge, which is associated with Joule heating. One of the front runners among 'beyond-CMOS' technologies is spintronics, which relies on spins rather than charges to transfer and process information; however, much of the energy efficiency of spintronics is lost if spin flipping - the elementary spintronic operation - must in itself be performed by electrical currents. For this reason, voltage control of magnetic components is widely considered to be the key to large-scale commercialisation of spintronics [1-3]. The field of oxide electronics emerges precisely from the consideration that oxides, especially those containing magnetic transition metal ions such as Co, Mn and Fe, can display a multitude of intriguing electrically-controlled multi-functional properties in their insulating states, whilst integration with CMOS is already a reality. The potential of oxide electronics can be further enhanced by exploiting the power of topology, which involves, quite literally, tying spins into 'magnetic knots'. In work recently published in Nature Materials [4], an international team of collaborators lead by Professor Paolo G. Radaelli (Oxford Physics) presented a major breakthrough in this field [5]: they created, for the first time, small-scale hybrid oxide/metal topological magnetic objects, consisting of tightly-coupled spin vortices in antiferromagnetic iron oxide (a-Fe2O3) and ferromagnetic metallic cobalt (Co). One particularly appealing feature of this system is that it employs cheap and readily available materials (a-Fe2O3 is the most abundant constituent of common rust!) and relatively simple fabrication, raising hopes that these systems could be deployed on a commercial scale in the future. This EPSRC-funded DPhil project will give the successful candidate the opportunity to develop this line of research in different directions, both fundamental and applied.This project falls under the EPSRC Quantum devices components and systems theme.

尽管硅（CMOS）技术在推动IT革命方面取得了非凡的成功，但它本质上并不节能，因为它依赖于电荷的运动，而电荷的运动与焦耳热有关。在“超越CMOS”技术中，自旋电子学是领先者之一，它依赖于自旋而不是电荷来传输和处理信息;然而，如果自旋翻转-基本的自旋电子操作-本身必须通过电流来执行，那么自旋电子学的大部分能量效率就会损失。因此，磁性元件的电压控制被广泛认为是自旋电子学大规模商业化的关键[1-3]。氧化物电子学领域的出现正是因为考虑到氧化物，特别是那些含有磁性过渡金属离子如Co，Mn和Fe的氧化物，可以在其绝缘状态下显示出许多有趣的电控多功能特性，同时与CMOS集成已经成为现实。氧化物电子学的潜力可以通过利用拓扑学的力量来进一步增强，这涉及到，从字面上讲，将自旋捆绑到“磁结”中。在最近发表在《自然材料》杂志上的研究中，一个由保罗·G. Radaelli（牛津物理）在这一领域取得了重大突破[5]：他们首次创建了小规模的混合氧化物/金属拓扑磁性物体，由反铁磁性氧化铁（a-Fe 2 O3）和铁磁性金属钴（Co）中的紧密耦合自旋涡旋组成。该系统的一个特别吸引人的特点是，它采用廉价和容易获得的材料（a-Fe 2 O3是常见铁锈的最丰富的成分！）而且制造相对简单，这使人们对这些系统将来能够在商业规模上部署寄予了希望。这个EPSRC资助的哲学博士项目将为成功的候选人提供在不同方向发展这一研究的机会，包括基础和应用。该项目福尔斯EPSRC量子器件组件和系统主题。