Single Photon Detection for Long Wave Infrared

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In this project the student will design, fabricate and characterise InAs avalanche photodiodes (APDs) for detection of low photon levels. The design will take into consideration the dark current, responsivity and avalanche gain characteristics of InAs APDs. These characteristics will then in taken into consideration when designing the biasing circuit and amplifiers for InAs APDs. Once successful APD fabrication has been achieved, a linear array of APDs will be designed and fabricated, followed by integration with optical lens and amplifier circuits.