Nanoscale Engineering of Advanced Materials for Future Photonic and Quantum Devices

用于未来光子和量子器件的先进材料的纳米工程

• 批准号: 2314778
• 金额: --
• 依托单位: University of Manchester
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2314778
• 关键词: Nanoscale; Engineering; Advanced; Materials; Future

This project will explore the potential of ion beam doping with high spatial (sub-20nm) resolution to control the properties of advanced materials on the nanoscale. Electrically, optically and magnetically active dopants will be studied with the aim of enabling precisely-tuned local functionalization which may lead to the development of new advanced materials to enable the realization of future photonic and quantum technologies. Examples in include the development of single photon sources, control of topological systems, the harnessing of spin effect and the creation of qubits in semiconductor materials. The project will be mainly experimental and involve collaboration with leading groups within the UK and overseas. There is also the opportunity to develop modelling relating to the technique being developed and of the resulting physical properties.Key objectives:- Develop a methodology for the doping of semiconductor nanostructures with magnetic impurity ions;- Apply the developed methodology to other ion species to deliver optical and electronic functionality;- Characterise doped nanostructures for their electronic, optical and magnetic properties;- Demonstrate enhanced functionality via localised doping leading to the observation of enhanced behaviour (e.g. induced magnetization) at room-temperature.

该项目将探索具有高空间分辨率（亚20纳米）的离子束掺杂的潜力，以控制纳米级先进材料的性能。将研究电，光和磁活性掺杂剂，目的是实现精确调谐的局部功能化，这可能导致新的先进材料的开发，以实现未来的光子和量子技术。例子包括单光子源的发展，拓扑系统的控制，自旋效应的利用和半导体材料中量子比特的创建。该项目将主要是实验性的，并涉及与英国和海外的领导团体合作。关键目标：-开发一种方法，用于用磁性杂质离子掺杂半导体纳米结构;-将所开发的方法应用于其他离子种类，以提供光学和电子功能;-表征掺杂纳米结构的电子、光学和磁性特性;- 通过局部掺杂证明增强的功能性，导致在室温下观察到增强的行为（例如感应磁化）。