PROBING QUANTUM STATES WITH SILICON CARBIDE NANOELECTRONICS

用碳化硅纳米电子学探测量子态

• 批准号: 2321701
• 金额: --
• 依托单位: University of Strathclyde
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2321701
• 关键词: PROBING; QUANTUM; STATES; SILICON; CARBIDE

Unbreakable cryptography, teleportation of information and ultra-fast computing will soon cease to be figments of science fiction literature. These are now considered imminent realities enabled by the upbringing of quantum technologies [1]. Devices that exploit the laws of quantum physics are developing quickly and many materials are presently under scrutiny to build the future quantum hardware [2-3]. This project will investigate quantum effects in silicon carbide (SiC), a wide-bandgap compound semiconductor made of silicon and carbon. On the one hand, SiC benefits from mature manufacturing techniques, being it extensively used for power electronics. On the other hand, exquisite quantum effects, such as coherent electron spin superposition and single-photon generation, have been demonstrated in this material, by exploiting the properties of atomic defects in its crystal [4-5]. However, most of these experiments have been so far performed in plain unprocessed wafers by means of optical scanning techniques. The crucial step that this PhD project will address is the realisation and control of quantum phenomena in nanometre scale electronic devices, such as transistors and diodes.The research activities will balance device design and modelling, hands-on cleanroom fabrication, as well as electrical and optical experimental measurements with cryogenic set-ups. The student will be involved in making and characterising devices that span from metal-oxide-semiconductor nano-capacitors to superconductive microwave resonators and LEDs, in order to couple electron spins to electromagnetic radiation.[1] The European Quantum Flagship https://qt.eu[2] T.D. Ladd et al. Nature 464, 45 (2010)[3] D.D. Awschalom et al. Science 339, 1174 (2013) [4] A. Lohrmann et al. Rep. Prog. Phys. 80, 034502 (2017)[5] M. Atature et al. Nature Reviews Materials 3, 38 (2018)

牢不可破的密码学、信息的远距离传送和超高速计算将很快不再是科幻文学中的虚构。这些现在被认为是由量子技术的成长所实现的迫在眉睫的现实[1]。利用量子物理定律的设备正在迅速发展，许多材料目前正在接受审查，以构建未来的量子硬件[2-3]。本项目将研究碳化硅（SiC）中的量子效应，碳化硅是一种由硅和碳制成的宽带隙化合物半导体。一方面，SiC受益于成熟的制造技术，广泛用于电力电子。另一方面，通过利用其晶体中原子缺陷的性质，已经在这种材料中证明了精致的量子效应，例如相干电子自旋叠加和单光子产生[4-5]。然而，迄今为止，这些实验中的大多数都是通过光学扫描技术在普通未加工的晶片上进行的。该博士项目将解决的关键一步是实现和控制纳米级电子器件中的量子现象，如晶体管和二极管。研究活动将平衡器件设计和建模，动手洁净室制造，以及与低温设置的电气和光学实验测量。学生将参与制造和表征从金属氧化物半导体纳米电容器到微波谐振器和LED的设备，以便将电子自旋耦合到电磁辐射。[1]欧洲量子旗舰https：//qt.eu [2] T.D.拉德（Ladd）等人，自然（Nature）464，45（2010）[3] D. D. Awschalom等人Science 339，1174（2013）[4] A. Lohrmann等人，Rep. Prog. Phys. 80，034502（2017）[5] M. Atature et al. Nature Reviews Materials 3，38（2018）