Polyoxometalate nanoscale electronic devices

多金属氧酸盐纳米级电子器件

• 批准号: 2448177
• 金额: --
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2448177
• 关键词: Polyoxometalate; nanoscale; electronic; devices

Polyoxometalates (POMs) are solution-processed nanoscale metal oxide molecular clusters, wellknown for their exceptional redox properties, which, combined with their high thermodynamic stability and plethora of nanosized architectures, render them ideal candidates to be incorporated in nanoscale electronic devices, such as molecular junctions and non-volatile memories. POM-based molecular memories utilise only a few electrons in localised redox reactions that induce the resistive switching mechanism at the molecular level, bearing the potential for high-density and multi-bit data storage. Different types of POM molecules will be investigated in two-terminal coplanar nanogap-separated (<10 nm) electrodes towards development of single-molecule junctions and molecular memory devices. They will be deposited on the pre-patterned metal electrodes using various self-assembly techniques, such as spin-coating, drop casting, Langmuir-Blodgett and layer-by layer self-assembly. The nanoscale films will be characterised with atomic force microscopy and scanning electron microscopy and their DC current-voltage and impedance characteristics will be thoroughly studied to obtain a comprehensive understanding of the operational principle. Their photoredox properties will be also explored via exposure at UV light towards optically controlled memories. The combination of molecular materials with nanoscale device architectures offers a unique opportunity to boost the capability of advanced molecule-based high-density memory technologies for application in low-power consumer electronics and artificial intelligence.

多氧化盐（POM）是溶液加工的纳米氧化金属氧化物分子簇，以其特殊的氧化还原特性而闻名，它们与它们的高热力学稳定性和众多纳米化结构相结合，使它们成为纳米级电子设备中的理想候选物，例如纳米级电子设备，例如分解型号和非分解范围。基于POM的分子记忆仅在局部氧化还原反应中仅利用少数电子，这些电子在分子水平上诱导电阻开关机理，具有高密度和多位数据存储的潜力。将在两端共面纳米纳法纳米纳米纳米纳米纳米纳米纳米（<10 nm）电极中研究不同类型的POM分子，以开发单分子连接和分子记忆设备。它们将使用各种自组装技术（例如自旋涂层，下降铸造，langmuir-blodgett和层层自组装）将它们沉积在预制的金属电极上。纳米级膜将以原子力显微镜和扫描电子显微镜进行表征，其直流电流 - 电压和阻抗特征将得到彻底研究，以获得对操作原理的全面理解。还将通过在紫外线下朝着光学控制的记忆曝光来探索它们的光电毒性特性。分子材料与纳米级设备体系结构的结合提供了一个独特的机会，可以提高基于高级分子的高密度存储技术的能力，以在低功率消费电子和人工智能中应用。