Polyoxometalate nanoscale electronic devices

多金属氧酸盐纳米级电子器件

• 批准号: 2448177
• 金额: --
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2448177
• 关键词: Polyoxometalate; nanoscale; electronic; devices

Polyoxometalates (POMs) are solution-processed nanoscale metal oxide molecular clusters, wellknown for their exceptional redox properties, which, combined with their high thermodynamic stability and plethora of nanosized architectures, render them ideal candidates to be incorporated in nanoscale electronic devices, such as molecular junctions and non-volatile memories. POM-based molecular memories utilise only a few electrons in localised redox reactions that induce the resistive switching mechanism at the molecular level, bearing the potential for high-density and multi-bit data storage. Different types of POM molecules will be investigated in two-terminal coplanar nanogap-separated (<10 nm) electrodes towards development of single-molecule junctions and molecular memory devices. They will be deposited on the pre-patterned metal electrodes using various self-assembly techniques, such as spin-coating, drop casting, Langmuir-Blodgett and layer-by layer self-assembly. The nanoscale films will be characterised with atomic force microscopy and scanning electron microscopy and their DC current-voltage and impedance characteristics will be thoroughly studied to obtain a comprehensive understanding of the operational principle. Their photoredox properties will be also explored via exposure at UV light towards optically controlled memories. The combination of molecular materials with nanoscale device architectures offers a unique opportunity to boost the capability of advanced molecule-based high-density memory technologies for application in low-power consumer electronics and artificial intelligence.

聚氧乙烯酸盐（POM）是溶液处理的纳米级金属氧化物分子簇，以其优异的氧化还原性能而闻名，结合其高热力学稳定性和过多的纳米结构，使其成为纳米级电子器件（如分子结和非易失性存储器）的理想候选者。基于POM的分子存储器在局部氧化还原反应中仅利用少数电子，该反应在分子水平上诱导电阻开关机制，从而具有高密度和多位数据存储的潜力。不同类型的POM分子将在双端共面纳米间隙分离（<10 nm）电极中进行研究，以开发单分子结和分子存储器件。它们将使用各种自组装技术沉积在预图案化的金属电极上，例如旋涂、滴铸、Langmuir-Blodgett和逐层自组装。纳米级薄膜的特点是与原子力显微镜和扫描电子显微镜和他们的直流电流-电压和阻抗特性将得到彻底的研究，以获得全面的了解的工作原理。它们的光氧化还原特性也将通过暴露在紫外光下对光控存储器进行探索。分子材料与纳米级器件架构的结合提供了一个独特的机会，可以提高先进的基于分子的高密度存储器技术在低功耗消费电子和人工智能中的应用能力。