Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials

新兴电子材料中的工程纳米和量子现象

基本信息

  • 批准号:
    RGPIN-2017-06893
  • 负责人:
  • 金额:
    $ 3.35万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Discovery Grants Program - Individual
  • 财政年份:
    2022
  • 资助国家:
    加拿大
  • 起止时间:
    2022-01-01 至 2023-12-31
  • 项目状态:
    已结题

项目摘要

The main objective of this Research Program is to establish new electronic materials and devices with tunable properties that are a consequence of nanoscale and quantum processes. The proposed Program is organized in three major axes: (1) Isotopically programmed one-dimensional nanostructures; (2) Non-equilibrium group IV quantum structures; and (3) Non-zero bandgap two-dimensional materials. The first research axis will create new frontiers in the field of nanowires and implement a new generation of nanowire-based devices by exploiting the difference in the physical properties between stable isotopes. The precise manipulation of different isotopes in individual group IV semiconductor nanowires will enable nanodevices with controlled nuclear spin distribution. The isotope-induced mass disorder will also be exploited to engineer the thermal conductivity within a single nanoscale device. The second research axis will capitalize on the development of direct bandgap, tin-containing group IV semiconductors to establish a novel family of quantum structures and devices to study the effects of intra-cavity coherent photon intensity on photon-assisted tunneling. The third research axis aims at establishing protocols to implement new two-dimensional materials made of group V elements. These materials exhibit quantum confinement and enhanced transport properties similar to graphene, in addition to a non-zero bandgap which makes them relevant for electronic and optoelectronic applications. The fundamental paradigm at the core of these research axes is the capability to tailor the physical properties through a precise, atomistic-level control of structure and composition during the epitaxial growth. New experimental methods are proposed to study and control surface and interface processes leading to these new classes of electronic materials. These material systems will provide a rich playground to systematically investigate some of the most exciting fundamental phenomena and problems in materials physics including nanoscale heat transport, nuclear spin dynamics, quantum tunneling, and quantum confinement. This Program will also lay the groundwork for collaborative, multi-disciplinary, and integrated research to control and harness these phenomena in innovative devices such as thermal diodes and transistors, quantum memories, and light emitting transistors. The results of this research will have immediate impacts on semiconductor science and technology and pave the way to new, high-performance applications in information technology, clean energy, and precise metrology. Progress in nanoscale and quantum technologies is crucial to ensure global competitiveness of the Canadian industry, which is in an excellent position to benefit from trained highly qualified personnel and locally generated intellectual properties.
该研究计划的主要目标是建立新的电子材料和器件,这些材料和器件具有可调特性,这些特性是纳米级和量子过程的结果。该计划分为三个主轴:(1)同位素编程一维纳米结构;(2)非平衡IV族量子结构;(3)非零带隙二维材料。第一个研究轴将在纳米线领域创造新的前沿,并通过利用稳定同位素之间物理性质的差异来实现新一代基于纳米线的设备。精确操纵单个IV族半导体纳米线中的不同同位素将使纳米器件具有受控的核自旋分布。同位素诱导的质量无序也将被用来设计单个纳米级器件内的热导率。第二个研究轴将利用直接带隙,含锡的第四族半导体的发展,建立一个新的家庭的量子结构和设备,研究腔内相干光子强度对光子辅助隧穿的影响。第三个研究轴旨在建立协议,以实现由V族元素制成的新二维材料。这些材料表现出类似于石墨烯的量子限制和增强的传输特性,除了非零带隙之外,这使得它们与电子和光电应用相关。这些研究轴的核心的基本范式是通过在外延生长期间对结构和组成进行精确的原子级控制来定制物理性质的能力。提出了新的实验方法来研究和控制表面和界面过程,导致这些新的电子材料类。这些材料系统将为系统地研究材料物理学中一些最令人兴奋的基本现象和问题提供丰富的平台,包括纳米级热传输,核自旋动力学,量子隧穿和量子限制。该计划还将为合作,多学科和综合研究奠定基础,以控制和利用创新设备中的这些现象,如热二极管和晶体管,量子存储器和发光晶体管。这项研究的结果将对半导体科学和技术产生直接影响,并为信息技术、清洁能源和精确计量领域的新的高性能应用铺平道路。纳米和量子技术的进步对于确保加拿大工业的全球竞争力至关重要,加拿大工业处于有利地位,可以受益于训练有素的高素质人才和当地产生的知识产权。

项目成果

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Moutanabbir, Oussama其他文献

Growth and Luminescence of Polytypic InP on Epitaxial Graphene
  • DOI:
    10.1002/adfm.201705592
  • 发表时间:
    2018-02-21
  • 期刊:
  • 影响因子:
    19
  • 作者:
    Mukherjee, Samik;Nateghi, Nima;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature
  • DOI:
    10.1021/nn1030274
  • 发表时间:
    2011-02-01
  • 期刊:
  • 影响因子:
    17.1
  • 作者:
    Moutanabbir, Oussama;Senz, Stephan;Horn-von Hoegen, Michael
  • 通讯作者:
    Horn-von Hoegen, Michael
Indirect-to-direct band gap transition in relaxed and strained Ge1-x-ySixSny ternary alloys
  • DOI:
    10.1063/1.4889926
  • 发表时间:
    2014-08-14
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    Attiaoui, Anis;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn
  • DOI:
    10.1021/acs.cgd.0c00270
  • 发表时间:
    2020-05-06
  • 期刊:
  • 影响因子:
    3.8
  • 作者:
    Nicolas, Jerome;Assali, Simone;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
  • DOI:
    10.1021/acsphotonics.1c01728
  • 发表时间:
    2022-03-16
  • 期刊:
  • 影响因子:
    7
  • 作者:
    Luo, Lu;Assali, Simone;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama

Moutanabbir, Oussama的其他文献

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{{ truncateString('Moutanabbir, Oussama', 18)}}的其他基金

Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2022
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Canada Research Chairs
Nanoscale And Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2021
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2021
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Discovery Grants Program - Individual
Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2020
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2020
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Discovery Grants Program - Individual
Scalable group V two-dimensional materials for mid-infrared optoelectronics
用于中红外光电的可扩展V族二维材料
  • 批准号:
    506700-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Strategic Projects - Group
Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2019
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Canada Research Chairs
Monolithic multi-junction III-V solar cells with optimal 1 eV subcell
具有最佳 1 eV 子电池的单片多结 III-V 太阳能电池
  • 批准号:
    506727-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Strategic Projects - Group
Mid-infrared integrated optoelectronics on silicon
硅基中红外集成光电器件
  • 批准号:
    508856-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Collaborative Research and Development Grants
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2019
  • 资助金额:
    $ 3.35万
  • 项目类别:
    Discovery Grants Program - Individual

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