Engineering Semiconductor Devices for Future Scaling of Quantum Technologies

III-V族材料提供了一个天然的平台，在其上建立光子技术，由于能够通过组成的变化来控制其电子特性，如通过量子点（QD）系统的开发所例示的。尽管取得了许多成功，但围绕此类系统内的功能的直接工程仍然存在挑战。例如，对QD的生长位置的改进的（纳米级）控制将使得能够提高光子器件的性能和产率。同样地，以确定性的准确度对各个QD进行定制掺杂的能力将允许直接调谐功能（例如，经由磁性掺杂剂）。至关重要的是，这种能力应该使用一种适合未来制造的路线来提供，以便商业规模是可行的。该项目将联合收割机的纳米级先进材料工程（P-NAME）设施的平台在曼彻斯特的利用与分子束外延生长能力在国家外延设施在谢菲尔德提供这样的能力。您的目标是预先播种III-V QD生长，以实现精确的放置，从而实现可扩展的预定义阵列。您还将寻求开发掺杂单个量子点的方法，以进一步设计其光子特性并展示增强的功能。

III-V materials offer a natural platform on which to build photonic technologies due to the ability to control their electronic properties through variation of composition, as is exemplified through the development of quantum dot (QD) systems. Despite the many successes there remain challenges around the direct engineering of functionality within such systems. For example improved (nanoscale) control over the growth position of QDs would enable increased performance and yield of photonic devices. Likewise, the ability to undertaken bespoke doping of individual QDs with deterministic accuracy would allow functionality to be directly tuned (e.g. via magnetic dopants). Critically, such capability should be delivered using a route that is amenable towards future manufacturing so that commercial scaleup is feasible. This project will combine the utilisation of the Platform for Nanoscale Advanced Material Engineering (P-NAME) facility at Manchester alongside MBE growth capability at the National Epitaxy Facility at Sheffield to deliver such a capability. You will aim to pre-seed III-V QD growth to allow their precise placement and thereby enable scalable pre-defined arrays to be realised. You will also seek to develop the methodology to dope individual quantum dots to further engineer their photonic properties and demonstrate enhanced functionality.