Engineering Semiconductor Devices for Future Scaling of Quantum Technologies

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III-V materials offer a natural platform on which to build photonic technologies due to the ability to control their electronic properties through variation of composition, as is exemplified through the development of quantum dot (QD) systems. Despite the many successes there remain challenges around the direct engineering of functionality within such systems. For example improved (nanoscale) control over the growth position of QDs would enable increased performance and yield of photonic devices. Likewise, the ability to undertaken bespoke doping of individual QDs with deterministic accuracy would allow functionality to be directly tuned (e.g. via magnetic dopants). Critically, such capability should be delivered using a route that is amenable towards future manufacturing so that commercial scaleup is feasible. This project will combine the utilisation of the Platform for Nanoscale Advanced Material Engineering (P-NAME) facility at Manchester alongside MBE growth capability at the National Epitaxy Facility at Sheffield to deliver such a capability. You will aim to pre-seed III-V QD growth to allow their precise placement and thereby enable scalable pre-defined arrays to be realised. You will also seek to develop the methodology to dope individual quantum dots to further engineer their photonic properties and demonstrate enhanced functionality.