Wide band gap semiconductor devices

宽带隙半导体器件

• 批准号: 2887562
• 金额: --
• 依托单位: University of York
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2887562
• 关键词: Wide; band; gap; semiconductor; devices

A key enabler of power electronics is the power device and in the last two decades there has been a gradual transition from silicon-based power devices to wide band gap-based power devices. Both Silicon Carbide (SiC) and Gallium Nitride (GaN) based power devices have been demonstrating superior performance compared to silicon, which has seen their uptake in a range of power electronics application. There are projections that suggest if 90% of all new power electronic systems installed would use SiC and GaN power devices then this would result in a 25% decrease in energy use globally every year. The improvements are based on their inherent material characteristics and device designs.There is still further scope for improvements in such power semiconductor devices which operated with improved characteristics. This project relates to novel device designs for such wide band gap materials. A significant portion of the work will relate to the design and modelling of novel wide band gap semiconductor-based devices, primarily using TCAD software.

功率器件是电力电子的关键推动者，在过去的二十年中，已经从硅基功率器件逐渐过渡到基于宽带隙的功率器件。与硅相比，基于碳化硅（SiC）和氮化镓（GaN）的功率器件已经显示出优越的性能，硅已经在一系列电力电子应用中得到了应用。有预测表明，如果所有新安装的电力电子系统中有90%使用SiC和GaN功率器件，那么这将导致全球每年能源使用量减少25%。这些改进是基于它们固有的材料特性和器件设计。在以改进的特性运行的这种功率半导体器件中还有进一步改进的余地。本项目涉及这种宽带隙材料的新型器件设计。工作的一个重要部分将涉及设计和建模的新型宽带隙半导体为基础的设备，主要使用TCAD软件。