Field Effected Aerosol Assisted Chemical Vapour Deposition (FE-AACVD) of Thin Film Materials

薄膜材料的场效应气溶胶辅助化学气相沉积 (FE-AACVD)

• 批准号: 2736445
• 金额: --
• 依托单位: University of Bath
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2736445
• 关键词: Field; Effected; Aerosol; Assisted; Chemical

Thin inorganic films as seen in metal oxide semiconductors can perform wide-ranging electronic and energy storage applications and possess great potential for both industry and society. Metal oxide materials generated by Aerosol Assisted Chemical Vapour Deposition (AACVD) typically form in a specific orientation of crystallinity and structure, termed a morphology, for each precursor combination and substrate used. The directing effects of electric and magnetic fields on aerosolised precursors in AACVD during transport and deposition will be investigated with the aim of accessing thin inorganic films with novel morphologies of improved efficacy. The initial target will be making semiconducting photoelectrodes of use in water splitting processes. The chemical synthesis of both known and novel d-block and/or f-block inorganic precursors to be deposited will first be achieved, targeting single source precursor designs where possible. Dipolar and paramagnetic precursors of elements such as vanadium and iron appear promising candidates for maximising synergy with electric and magnetic fields. Work by L. Romero, R. Binions et al. concerning titanium dioxide film synthesis under electric field AACVD will provide a suitable reference point. Control AACVD depositions will be performed before the morphological impact of introducing electric and magnetic fields during deposition is investigated. Analytical techniques e.g., X-ray diffraction and scanning electron microscopy, will be used to interpret results. The most promising precursor(s) will be taken forwards for an in-depth analysis of aerosol composition and distribution during transport to gain understanding of correlations with morphological control.

在金属氧化物半导体中看到的薄无机膜可以执行广泛的电子和能源存储应用，并为工业和社会具有巨大的潜力。由气溶胶辅助化学蒸气沉积（AACVD）产生的金属氧化物材料通常以特定的结晶度和结构为方向形成，称为形态，用于使用的每个前体组合和所使用的底物。将研究运输和沉积过程中电气和磁场对AACVD雾化前体的指导作用，以访问具有提高功效的新形态的薄薄膜。最初的目标将使在水分裂过程中使用半导体光电素。将首先实现已知和新型D块和/或F块无机前体的化学合成，并在可能的情况下以单源前体设计为目标。诸如钒和铁等元素的偶极和顺磁前体似乎是有前途的候选者，以最大程度地与电场和磁场达到协同作用。 L. Romero，R。Binions等人的工作。关于电场AACVD下的二氧化钛膜的合成，将提供合适的参考点。在研究沉积过程中引入电场和磁场的形态影响之前，将进行控制AACVD沉积。分析技术，例如X射线衍射和扫描电子显微镜，将用于解释结果。最有前途的前体将被前进，以对运输过程中的气溶胶组成和分布进行深入分析，以了解与形态控制相关的理解。