Field Effected Aerosol Assisted Chemical Vapour Deposition (FE-AACVD) of Thin Film Materials

薄膜材料的场效应气溶胶辅助化学气相沉积 (FE-AACVD)

• 批准号: 2736445
• 金额: --
• 依托单位: University of Bath
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2736445
• 关键词: Field; Effected; Aerosol; Assisted; Chemical

Thin inorganic films as seen in metal oxide semiconductors can perform wide-ranging electronic and energy storage applications and possess great potential for both industry and society. Metal oxide materials generated by Aerosol Assisted Chemical Vapour Deposition (AACVD) typically form in a specific orientation of crystallinity and structure, termed a morphology, for each precursor combination and substrate used. The directing effects of electric and magnetic fields on aerosolised precursors in AACVD during transport and deposition will be investigated with the aim of accessing thin inorganic films with novel morphologies of improved efficacy. The initial target will be making semiconducting photoelectrodes of use in water splitting processes. The chemical synthesis of both known and novel d-block and/or f-block inorganic precursors to be deposited will first be achieved, targeting single source precursor designs where possible. Dipolar and paramagnetic precursors of elements such as vanadium and iron appear promising candidates for maximising synergy with electric and magnetic fields. Work by L. Romero, R. Binions et al. concerning titanium dioxide film synthesis under electric field AACVD will provide a suitable reference point. Control AACVD depositions will be performed before the morphological impact of introducing electric and magnetic fields during deposition is investigated. Analytical techniques e.g., X-ray diffraction and scanning electron microscopy, will be used to interpret results. The most promising precursor(s) will be taken forwards for an in-depth analysis of aerosol composition and distribution during transport to gain understanding of correlations with morphological control.

金属氧化物半导体中的无机薄膜具有广泛的电子和能量存储应用，具有巨大的工业和社会潜力。由气溶胶辅助化学气相沉积（AACVD）产生的金属氧化物材料通常以特定的结晶度和结构方向形成，称为形态，用于每种前驱体组合和衬底。研究电场和磁场对AACVD中雾化前体在运输和沉积过程中的导向作用，目的是获得具有改进效能的新型形态的无机薄膜。最初的目标将是制造用于水分解过程的半导体光电极。将首先实现已知和新的d-嵌段和/或f-嵌段无机前体的化学合成，并在可能的情况下针对单一来源前体设计。钒和铁等元素的偶极体和顺磁性前体似乎是与电场和磁场最大协同作用的有希望的候选者。L. Romero， R. Binions等人关于电场AACVD下二氧化钛膜合成的工作将提供一个合适的参考点。控制AACVD沉积将在研究沉积过程中引入电场和磁场对形貌的影响之前进行。分析技术，如x射线衍射和扫描电子显微镜，将被用来解释结果。最有希望的前体将被用于深入分析气溶胶的组成和分布在运输过程中，以获得与形态控制的相关性。