Field Effected Aerosol Assisted Chemical Vapour Deposition (FE-AACVD) of Thin Film Materials

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Thin inorganic films as seen in metal oxide semiconductors can perform wide-ranging electronic and energy storage applications and possess great potential for both industry and society. Metal oxide materials generated by Aerosol Assisted Chemical Vapour Deposition (AACVD) typically form in a specific orientation of crystallinity and structure, termed a morphology, for each precursor combination and substrate used. The directing effects of electric and magnetic fields on aerosolised precursors in AACVD during transport and deposition will be investigated with the aim of accessing thin inorganic films with novel morphologies of improved efficacy. The initial target will be making semiconducting photoelectrodes of use in water splitting processes. The chemical synthesis of both known and novel d-block and/or f-block inorganic precursors to be deposited will first be achieved, targeting single source precursor designs where possible. Dipolar and paramagnetic precursors of elements such as vanadium and iron appear promising candidates for maximising synergy with electric and magnetic fields. Work by L. Romero, R. Binions et al. concerning titanium dioxide film synthesis under electric field AACVD will provide a suitable reference point. Control AACVD depositions will be performed before the morphological impact of introducing electric and magnetic fields during deposition is investigated. Analytical techniques e.g., X-ray diffraction and scanning electron microscopy, will be used to interpret results. The most promising precursor(s) will be taken forwards for an in-depth analysis of aerosol composition and distribution during transport to gain understanding of correlations with morphological control.