Development of nanoporous GaN on Silicon substrate for optoelectronic devices

多孔iii族氮化物作为具有新特性和应用的化合物半导体正在兴起，如无应变光学反射器，化学传感器，以及从原生衬底和远程外延中提升器件的关键发展途径。传感和光电子器件在过去十年中取得了重大进展。多孔iii型氮化物广泛采用自顶向下的制备方法，如电化学（EC）和光电化学（PE）蚀刻。在PE蚀刻的情况下，孔隙形态是通过关键参数控制的，如应用电位/偏压、材料掺杂密度和照明。自发形成的多孔III-氮化物的孔隙形态为衬底温度、III族和N通量。自下而上的制造方法是无污染的。整个器件，如发光二极管、光电二极管和激光器，可以简单地通过改变生长参数在一个单一的过程运行中生长。该项目将包括：发展对多孔iii -氮化物晶体结构、电子结构和光学性质的理论认识。了解原位和非原位表征，生长机制，设计和制造多孔iii -氮化物。自底向上和自顶向下制备多孔iii型氮化物。该项目将在最先进的研究设施中开发，包括分子束外延（MBE）、x射线衍射、扫描电子显微镜和光致发光。

Porous group III-Nitrides are emerging as compound semiconductors with novel properties and applications such as strain-free optical reflectors, chemical sensors and a critical development pathway to device lift-off from the native substrates and remote epitaxy. Significant progress has been made in a decade across sensing and optoelectronic devices. Porous III-nitrides are formed widely using top-down fabrication methods such as electrochemical (EC) and photoelectrochemical (PE) etching. Pore morphology is controlled via critical parameters such as applied potential/bias, material doping density and illumination in the case of PE etching. The pore morphology of spontaneously formed porous III-Nitrides is substrate temperature, group III and N fluxes. The bottom-up fabrication approach is contamination-free. The entire device, such as light-emitting diodes, photodiodes and lasers, can be grown simply by changing the growth parameters in a single process run.The project will involve: Development of theoretical understanding of crystal structures, electronic structure, and optical properties of porous III-Nitrides.Understanding of in-situ and ex-situ characterisation, growth mechanisms, design and fabrication of porous III-Nitrides.Development of Porous III-Nitrides via bottom-up and top-bottom approaches.The project will be developed in state-of-the-art research facilities, which include molecular beam epitaxy (MBE), X-ray diffraction, Scanning electron microscopy and photoluminescence.