Investigation of the Novel Boron Arsenide Wonder Material at Semiconductor Device Level

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Cubic boron arsenide (c-BA) is an emerging semiconductor with remarkable properties. It exhibits a close electron mobility of 1400 cm2/Vs at room temperature, comparable to silicon's 1400 cm2/Vs. However, its hole mobility is about 2100 cm2/Vs, significantly larger than silicon's 450 cm2/Vs. Furthermore, c-BA's measured thermal conductivity ranges from 1000 to 1300 W/mK, far exceeding silicon's 140 W/mK. These exceptional transport properties make c-BA a promising candidate for improvements in digital, radio-frequency (mobile computing), and photovoltaic (solar cells) applications.However, superior carrier transport alone is not enough. This project aims to study the carrier mobility and density in metal-oxide-semiconductor structures, which are crucial for electronic control, including complementary metal-oxide-semiconductor (CMOS) transistor logic in every device we use. We will prepare these structures at the Centre for Integrative Semiconductor Materials, using platinum/titanium as a metal, gallium oxide as an oxide, and c-BA as a semiconductor. We will measure the carrier mobility and density at the oxide-semiconductor interface. Since the interface will inevitably degrade the electron and hole mobility, our goal is to optimize the choice of oxide and metal to achieve the best possible mobility and density.