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Investigation of the Novel Boron Arsenide Wonder Material at Semiconductor Device Level

半导体器件级新型砷化硼神奇材料的研究

基本信息

批准号：
2893921
负责人：
金额：
--
依托单位：
Swansea University
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2023
资助国家：
英国
起止时间：
2023 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2893921
关键词：
Investigation Novel Boron Arsenide Wonder

项目摘要

Cubic boron arsenide (c-BA) is an emerging semiconductor with remarkable properties. It exhibits a close electron mobility of 1400 cm2/Vs at room temperature, comparable to silicon's 1400 cm2/Vs. However, its hole mobility is about 2100 cm2/Vs, significantly larger than silicon's 450 cm2/Vs. Furthermore, c-BA's measured thermal conductivity ranges from 1000 to 1300 W/mK, far exceeding silicon's 140 W/mK. These exceptional transport properties make c-BA a promising candidate for improvements in digital, radio-frequency (mobile computing), and photovoltaic (solar cells) applications.However, superior carrier transport alone is not enough. This project aims to study the carrier mobility and density in metal-oxide-semiconductor structures, which are crucial for electronic control, including complementary metal-oxide-semiconductor (CMOS) transistor logic in every device we use. We will prepare these structures at the Centre for Integrative Semiconductor Materials, using platinum/titanium as a metal, gallium oxide as an oxide, and c-BA as a semiconductor. We will measure the carrier mobility and density at the oxide-semiconductor interface. Since the interface will inevitably degrade the electron and hole mobility, our goal is to optimize the choice of oxide and metal to achieve the best possible mobility and density.

立方砷化硼（c-BA）是一种具有显着性能的新兴半导体。它在室温下的电子迁移率为1400 cm 2/Vs，与硅的1400 cm 2/Vs相当。然而，它的空穴迁移率约为2100 cm 2/Vs，明显大于硅的450 cm 2/Vs。此外，c-BA的测量热导率范围为1000至1300 W/mK，远远超过硅的140 W/mK。这些优异的传输特性使c-BA成为数字、射频（移动的计算）和光伏（太阳能电池）应用改进的有希望的候选者。然而，仅凭上级载流子传输是不够的。该项目旨在研究金属氧化物半导体结构中的载流子迁移率和密度，这对电子控制至关重要，包括我们使用的每个设备中的互补金属氧化物半导体（CMOS）晶体管逻辑。我们将在集成半导体材料中心准备这些结构，使用铂/钛作为金属，氧化镓作为氧化物，c-BA作为半导体。我们将测量氧化物-半导体界面处的载流子迁移率和密度。由于界面将不可避免地降低电子和空穴的迁移率，我们的目标是优化氧化物和金属的选择，以实现最佳的迁移率和密度。