Investigation of Hybrid III-V/II-VI structures grown by Liquid Phase Epitaxy for Mid-infrared Optoelectronic Devices

用于中红外光电器件的液相外延生长混合 III-V/II-VI 结构的研究

• 批准号: EP/G000204/1
• 负责人: Anthony Krier
• 金额: $ 9.09万
• 依托单位: Lancaster University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2008
• 资助国家: 英国
• 起止时间: 2008 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FG000204%2F1
• 关键词: Investigation; Hybrid; III; II; VI

We wish to investigate the epitaxial growth of hybrid III-V/II-VI structures from the liquid phase for use in Mid-infrared optoelectronic devices. Hybrid heterojunctions can give benefits as carrier confinement layers in LEDs or optical windows in detectors. However, the growth of hybrid III-V/II-VI structures from the liquid phase has hardly been investigated and it has not been established which II-VI-III-V combinations can be successfully grown by LPE.The impact of such epitaxial hybrid layers for devices could be of major significance for the mid-IR and the UK could obtain an internationally leading position. The intention here is to pave the way for a full proposal focussed more on the envisaged mid-infrared sources and detectors once some of the basic materials problems have been resolved.

我们希望研究用于中红外光电子器件的III-V/II-VI混合结构的液相外延生长。混合异质结可以作为LED中的载流子限制层或探测器中的光学窗口。然而，对于III-V/II-VI杂化结构的液相生长几乎没有研究，也没有确定LPE可以成功地生长出哪些II-VI-III-V组合。这种外延杂化层对器件的影响可能对中期IR具有重要意义，英国可能获得国际领先地位。这里的意图是为一项全面的提案铺平道路，该提案更侧重于设想的中红外源和探测器，一旦一些基本材料问题得到解决。

项目成果

InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy

通过液相外延在 Cd0.955Zn0.045Te 上生长 InSb

• DOI: 10.1016/j.infrared.2013.01.008
• 发表时间: 2013
• 期刊: Infrared Physics & Technology
• 影响因子: 3.3
• 作者: Yin M