Investigation of Hybrid III-V/II-VI structures grown by Liquid Phase Epitaxy for Mid-infrared Optoelectronic Devices

点击翻译按钮获取中文摘要

We wish to investigate the epitaxial growth of hybrid III-V/II-VI structures from the liquid phase for use in Mid-infrared optoelectronic devices. Hybrid heterojunctions can give benefits as carrier confinement layers in LEDs or optical windows in detectors. However, the growth of hybrid III-V/II-VI structures from the liquid phase has hardly been investigated and it has not been established which II-VI-III-V combinations can be successfully grown by LPE.The impact of such epitaxial hybrid layers for devices could be of major significance for the mid-IR and the UK could obtain an internationally leading position. The intention here is to pave the way for a full proposal focussed more on the envisaged mid-infrared sources and detectors once some of the basic materials problems have been resolved.