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Novel InSb/InAsSb Quantum Dot Nanostructures for Mid-infrared Laser Applications

用于中红外激光应用的新型 InSb/InAsSb 量子点纳米结构

基本信息

批准号：
EP/E028209/1
负责人：
Anthony Krier
金额：
$ 10.14万
依托单位：
Lancaster University
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2007
资助国家：
英国
起止时间：
2007 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FE028209%2F1
关键词：
Novel InSb InAsSb Quantum Dot

项目摘要

We are trying to make semiconductor lasers for the mid-infrared (2-5 um) spectral range for a variety of practical applications including; chemical process control, environmental monitoring of atmospheric pollution and free space optical communications. At present it is impossible to obtain laser emission at room temperature due to low internal efficiency within the active region of the device. One way of minimising the unwanted processes that compete with the light generation is to arrange for this to take place inside a very small volume of material which is called a quantum dot . Recently at Lancaster we have successfully produced some quantum dot structures which emit light, but to be effective for use in a laser we need to make a sheet containing a large number of small quantum dots. The proposed fellowship seeks to build on our recent successful results and to obtain expert assistance from Dr. Solov'ev from the Ioffe Institute in Russia who is a world-leading authority in this area. Dr. Solov'ev's group has produced a dense array of self-assembled InSb quantum dots having a mean diameter of ~ 2.5 nm and a sheet density of ~ 10^12 cm-2 using a special technique to produce the InSb quantum dot nanostructures in the sub-monolayer thickness range. Dr. Solov'ev has developed a strong international lead by demonstrating room temperature light emission from his InSb quantum dot nanostructures and is enthusiastic to collaborate with us to develop a room temperature mid-infrared laser which contains these quantum dots in the active region.

我们正试图使半导体激光器的中红外（2-5微米）光谱范围的各种实际应用，包括：化学过程控制，环境监测大气污染和自由空间光通信。目前，由于器件的有源区内的低内部效率，不可能在室温下获得激光发射。最大限度地减少与光产生竞争的不必要过程的一种方法是将其安排在称为量子点的非常小体积的材料内进行。最近在兰开斯特，我们已经成功地制造出了一些发光的量子点结构，但是为了有效地用于激光器，我们需要制造包含大量小量子点的薄片。拟议的奖学金旨在巩固我们最近的成功成果，并获得该领域世界领先权威俄罗斯约菲研究所Solov'ev博士的专家协助。Solov'ev博士的研究小组使用一种特殊的技术生产了自组装InSb量子点的密集阵列，其平均直径约为2.5 nm，片密度约为10^12 cm-2，以生产亚单层厚度范围内的InSb量子点纳米结构。Solov'ev博士通过展示他的InSb量子点纳米结构的室温光发射而建立了强大的国际领先地位，并热衷于与我们合作开发在有源区包含这些量子点的室温中红外激光器。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

DOI：
10.1007/978-1-4020-8425-6_31
发表时间：
2008-05
期刊：
影响因子：
0
作者：
V. A. Solov'ev;P. Carrington;Q. Zhuang;K. Lai;S. Haywood;S. Ivanov;A. Krier
通讯作者：
V. A. Solov'ev;P. Carrington;Q. Zhuang;K. Lai;S. Haywood;S. Ivanov;A. Krier

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

使用变质 InAs 缓冲层在 GaAs 基板上生长的中红外光谱范围的 InSb 量子点