Dilute Nitride Type II Quantum Dot Materials for Solar Cells based on GaAs - Collaborative Research in Energy with South Africa
用于基于 GaAs 的太阳能电池的稀氮化物 II 型量子点材料 - 与南非的能源合作研究
基本信息
- 批准号:EP/G070334/1
- 负责人:
- 金额:$ 51.12万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2009
- 资助国家:英国
- 起止时间:2009 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The development of efficient, affordable solar cells for clean energy production is a major global challenge and in this proposal we are seeking to achieve a breakthrough in the fabrication of novel quantum dot materials capable of substantially improving the performance of III-V solar cells based on GaAs. We propose a close collaborative project with Nelson Mandela Metropolitan University in South Africa, who have complementary expertise in photovoltaic cells, to develop and characterize hitherto unexplored GaSbN/GaNAs type-II quantum dot materials. These strain-compensated, dilute-nitride quantum dots will be implemented within the active region of prototype GaAs based solar cells to significantly extend the spectral response and improve the efficiency. This would lead to a new generation of solar cells for clean electricity generation. Feedback from device studies will provide valuable insight into the photovoltaic properties of these unique nanostructures, further aiding material optimization. The quantum dot materials that we shall develop here could either be used to increase efficiency in single junction cells, or could be incorporated into existing multi-junction cells to replace expensive Ge substrates, reduce cost and significantly increase performance. There are clear opportunities for uptake of the technology both within South Africa and the UK.
开发用于清洁能源生产的高效、经济的太阳能电池是一项重大的全球挑战,在这项提案中,我们正在寻求在制造新型量子点材料方面取得突破,这些材料能够大幅提高基于GaAs的III-V太阳能电池的性能。我们提出了一个密切的合作项目与南非的纳尔逊曼德拉都市大学,谁在光伏电池的互补专业知识,开发和表征迄今未开发的GaSbN/GaNAs II型量子点材料。这些应变补偿的稀氮化物量子点将在原型GaAs基太阳能电池的有源区内实现,以显著扩展光谱响应并提高效率。这将导致新一代太阳能电池的清洁发电。来自器件研究的反馈将为这些独特纳米结构的光伏特性提供有价值的见解,进一步帮助材料优化。我们将在这里开发的量子点材料既可以用于提高单结电池的效率,也可以并入现有的多结电池中,以取代昂贵的Ge衬底,降低成本并显着提高性能。南非和英国都有明显的机会吸收这项技术。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells
II 型 GaSb/GaAs 量子环太阳能电池中的载流子提取行为
- DOI:10.1088/0268-1242/29/3/035014
- 发表时间:2014
- 期刊:
- 影响因子:1.9
- 作者:Fujita H
- 通讯作者:Fujita H
Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation
使用直接激光激发从 GaAs 太阳能电池中的 GaSb 量子环中提取载流子
- DOI:10.1049/iet-opt.2013.0062
- 发表时间:2014
- 期刊:
- 影响因子:1.6
- 作者:James J
- 通讯作者:James J
Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells
GaSb/GaAs 量子环太阳能电池的增强红外光响应
- DOI:10.1063/1.4768942
- 发表时间:2012
- 期刊:
- 影响因子:4
- 作者:Carrington P
- 通讯作者:Carrington P
Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
II型GaSb单层量子点堆叠的快速热退火和光致发光
- DOI:10.1088/0022-3727/46/30/305104
- 发表时间:2013
- 期刊:
- 影响因子:0
- 作者:Mahajumi A
- 通讯作者:Mahajumi A
GaSb Quantum Dots growth by Liquid Phase Epitaxy
通过液相外延生长 GaSb 量子点
- DOI:10.3724/sp.j.1010.2013.00220
- 发表时间:2013
- 期刊:
- 影响因子:0.7
- 作者:HU S
- 通讯作者:HU S
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
Anthony Krier其他文献
Physics and technology of mid–infrared light emitting diodes
- DOI:
10.1098/rsta.2000.0745 - 发表时间:
2001-03 - 期刊:
- 影响因子:0
- 作者:
Anthony Krier - 通讯作者:
Anthony Krier
Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb
与 InAs 和 GaSb 晶格匹配的五元 GaInAsSbP 窄带隙合金的拉曼光谱
- DOI:
10.1088/0268-1242/27/1/015004 - 发表时间:
2011 - 期刊:
- 影响因子:1.9
- 作者:
K. J. Cheetham;P. Carrington;Anthony Krier;I. I. Patel;Francis Martin - 通讯作者:
Francis Martin
Anthony Krier的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('Anthony Krier', 18)}}的其他基金
Energy Resilient Manufacturing 2: Enabling Practical TPVs for Waste Heat Recovery
能源弹性制造 2:使用实用的 TPV 进行余热回收
- 批准号:
EP/P012035/1 - 财政年份:2017
- 资助金额:
$ 51.12万 - 项目类别:
Research Grant
TPVs for Waste Heat Recovery in Energy Resilient Manufacturing
TPV 用于能源弹性制造中的废热回收
- 批准号:
EP/M013707/1 - 财政年份:2015
- 资助金额:
$ 51.12万 - 项目类别:
Research Grant
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
用于中红外器件的 InAsNSb 稀氮化物材料
- 批准号:
EP/J015849/1 - 财政年份:2012
- 资助金额:
$ 51.12万 - 项目类别:
Research Grant
Liquid Phase Epitaxial Growth of Dilute Nitrides for the Mid-infrared - Visiting Fellowship for S. Dhar
中红外稀氮化物的液相外延生长 - S. Dhar 访问学者
- 批准号:
EP/G000190/1 - 财政年份:2008
- 资助金额:
$ 51.12万 - 项目类别:
Research Grant
Investigation of Hybrid III-V/II-VI structures grown by Liquid Phase Epitaxy for Mid-infrared Optoelectronic Devices
用于中红外光电器件的液相外延生长混合 III-V/II-VI 结构的研究
- 批准号:
EP/G000204/1 - 财政年份:2008
- 资助金额:
$ 51.12万 - 项目类别:
Research Grant
Novel InSb/InAsSb Quantum Dot Nanostructures for Mid-infrared Laser Applications
用于中红外激光应用的新型 InSb/InAsSb 量子点纳米结构
- 批准号:
EP/E028209/1 - 财政年份:2007
- 资助金额:
$ 51.12万 - 项目类别:
Research Grant
相似国自然基金
基于稀氮砷化镓(Dilute nitride GaNAs)的近红外自旋放大纳米线激光器的研究
- 批准号:61905071
- 批准年份:2019
- 资助金额:24.0 万元
- 项目类别:青年科学基金项目
相似海外基金
Creation of ultra-low defect gallium nitride crystals using a novel hybrid-type high-speed vapor phase epitaxy
使用新型混合型高速气相外延制造超低缺陷氮化镓晶体
- 批准号:
23K17743 - 财政年份:2023
- 资助金额:
$ 51.12万 - 项目类别:
Grant-in-Aid for Challenging Research (Exploratory)
EAGER: A novel route for high activation of implanted p-type regions in vertical Gallium Nitride devices.
EAGER:一种在垂直氮化镓器件中高度激活注入 p 型区域的新途径。
- 批准号:
2230090 - 财政年份:2022
- 资助金额:
$ 51.12万 - 项目类别:
Standard Grant
A search for novel efficient p-type nitride materials
寻找新型高效p型氮化物材料
- 批准号:
1905186 - 财政年份:2019
- 资助金额:
$ 51.12万 - 项目类别:
Standard Grant
Collaborative Research: A search for novel efficient p-type nitride materials
合作研究:寻找新型高效p型氮化物材料
- 批准号:
1904861 - 财政年份:2019
- 资助金额:
$ 51.12万 - 项目类别:
Standard Grant
Precision Machining of Diamond Plate by Saw Wire Fixed Grain of Wurtzite type Boron Nitride
纤锌矿型氮化硼锯线固定晶粒精密加工金刚石板材
- 批准号:
16K06791 - 财政年份:2016
- 资助金额:
$ 51.12万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of tandem type on-demand superconducting device of oxide degenerate semiconductor / nitride superconductor
氧化物简并半导体/氮化物超导串联式按需超导器件研制
- 批准号:
26420334 - 财政年份:2014
- 资助金额:
$ 51.12万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Dielectric rod type photonic crystal laser using dilute nitride semiconductor light source
使用稀氮化物半导体光源的介质棒型光子晶体激光器
- 批准号:
23686004 - 财政年份:2011
- 资助金额:
$ 51.12万 - 项目类别:
Grant-in-Aid for Young Scientists (A)
Creation of novel Mo-Cr Nitride Sintered Compacts with high Corrosion Resistance Having Self-healing Type Oxidation Resistance
具有自愈型抗氧化能力的新型高耐腐蚀性Mo-Cr氮化物烧结体的研制
- 批准号:
21560761 - 财政年份:2009
- 资助金额:
$ 51.12万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
The invention of interstitial-type metal nitride thin films with opto-agilent function and their device fabrication
具有光安捷功能的间隙型金属氮化物薄膜的发明及其器件制备
- 批准号:
13305047 - 财政年份:2001
- 资助金额:
$ 51.12万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
交替xr掺杂技术制备高空穴密度p型氮化物半导体薄膜晶体及其应用
- 批准号:
13355001 - 财政年份:2001
- 资助金额:
$ 51.12万 - 项目类别:
Grant-in-Aid for Scientific Research (A)