Organometallic main group chemistry Strained molecules and reactive intermediates

有机金属主族化学 应变分子和反应中间体

• 批准号: 261310-2006
• 负责人: Müller, Jens
• 金额: $ 2.91万
• 依托单位: University of Saskatchewan
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2007
• 资助国家: 加拿大
• 起止时间: 2007-01-01 至 2008-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=364918
• 关键词: Organometallic; main; group; chemistry; Strained

The heavier group 13 elements Al, Ga, and In play an important role in our modern life. Apart from aluminum's obvious presence as a bulk metal and as a component in alloys, organometallic alanes are indirectly present in the form of polymers (Ziegler/Natta type polymerization) and electronic devices (Chemical Vapor Deposition, CVD). The dearth of basic knowledge about organometallic aluminum compounds contrasts with the importance of the element. Gallium is the key component in modern electronic devices; e.g., GaAs is the second most important semiconductor known today. Indium is used in alloys and in semiconductor materials as an essential doping agent. Our main research activities are focused on the chemistry of the heavier group 13 elements aluminum, gallium, and indium. Our program can be divided in two main areas. 1. Organometallic synthesis. Recently we have synthesized novel strained ferrocene derivatives. The strain in these molecules is generated by a group 13 element bridge. Similar species have been shown to form novel polymers with potential applications. In this area of our research program, we intend to synthesize new strained molecules that can be used as precursors for new materials. 2. Matrix isolation and mass spectrometry. We will use both methods to identify highly reactive molecules that occur in the course of material depositions starting from gaseous molecules. This so-called Chemical Vapor Deposition (CVD) is a technique to produce well-defined thin layers of desired materials. Our program aims at a deeper understanding of the molecular species involved in CVD processes. Based on these insights, improvements of the materials are expected in the future.

较重的13族元素Al、Ga和In在我们的现代生活中发挥着重要作用。除了铝作为块体金属和合金中的组分明显存在之外，有机金属铝烷还间接以聚合物（齐格勒/纳塔型聚合）和电子器件（化学气相沉积，CVD）的形式存在。对有机金属铝化合物的基本知识的缺乏与该元素的重要性形成了鲜明对比。镓是现代电子器件中的关键成分;例如，GaAs是当今已知的第二大半导体。铟在合金和半导体材料中用作重要的掺杂剂。我们的主要研究活动集中在较重的13族元素铝，镓和铟的化学。我们的计划可以分为两个主要领域。1.有机合成。最近，我们合成了新的应变二茂铁衍生物。这些分子中的应变由第13族元素桥产生。类似的物种已被证明可以形成具有潜在应用的新型聚合物。在我们的研究计划的这一领域，我们打算合成新的应变分子，可用作新材料的前体。2.基质分离和质谱。我们将使用这两种方法来识别从气体分子开始的材料沉积过程中出现的高活性分子。这种所谓的化学气相沉积（CVD）是一种生产所需材料的良好定义的薄层的技术。我们的计划旨在更深入地了解CVD过程中涉及的分子种类。基于这些见解，预计未来将对材料进行改进。