Excitons of the structure and their application for design of electron devices

激子的结构及其在电子器件设计中的应用

• 批准号: 227779-2007
• 负责人: Alexandrov, Dimiter
• 金额: $ 1.18万
• 依托单位: Lakehead University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2009
• 资助国家: 加拿大
• 起止时间: 2009-01-01 至 2010-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=425271
• 关键词: Excitons; structure; their; application; design

This research proposal deals with the design of a new field effect transistor (FET) and the investigation of the properties of nitride semiconductors. The FET applies a new principle for formation of the channel conductivity based on tunnel injection of charges (electrons or holes) through a hetero-junction. These charges are a product of destroying of excitons of the structure located in the region of the hetero-junction. The proposed configuration includes a high resistance layer of GaN that acts as a FET channel. The hetero-junction is formed between this layer and an InGaN layer. The excitons of the structure are located within the InGaN. They are being destroyed if an electrical field of sufficient strength is applied on the GaN/InGaN hetero-structure. If the positive pole of the electrical field is connected to the FET-gate, the electrons of exciton origin penetrate into the GaN layer forming electron-type conductivity. If the negative pole is connected to the FET-gate, the holes of exciton origin penetrate into GaN forming a hole-type conductivity. In both cases the charge penetration is based on tunnel injection through a hetero-junction and the charges penetrate into the semiconductor with wider energy band gap (GaN). N-channel FET and p-channel FET are subjects of both design and technological performance. The objective of the project is to create a fast FET with potential application in both high frequency circuits and fast VLSI circuits based on nitride semiconductors. The dielectric function and the life-time of the excitons of the structure of several semiconductors related to InN are subjects of theoretical and experimental investigations according to the proposal. The electron band structure and the properties of MnGaN will be studied as well, because MnGaN is a promising semiconductor with application in both conventional and cryogenic electronics.

本研究计画系设计一种新型场效电晶体，并探讨氮化物半导体之特性。FET应用基于电荷（电子或空穴）通过异质结的隧道注入的沟道导电性的形成的新原理。这些电荷是破坏位于异质结区域中的结构的激子的产物。所提出的配置包括充当FET沟道的GaN的高电阻层。异质结形成在该层和InGaN层之间。该结构的激子位于InGaN内。如果在GaN/InGaN异质结构上施加足够强度的电场，则它们被破坏。如果电场的正极连接到FET栅极，则激子起源的电子穿透到GaN层中，形成电子型导电性。如果负极连接到FET栅极，则激子起源的空穴穿透到GaN中，形成空穴型导电性。在这两种情况下，电荷穿透是基于通过异质结的隧道注入，并且电荷穿透到具有更宽能带隙（GaN）的半导体中。N沟道FET和P沟道FET是设计和工艺性能的主题。该项目的目标是创建一个快速FET，在高频电路和基于氮化物半导体的快速VLSI电路中具有潜在的应用。根据该提议，与InN相关的几种半导体结构的激子的介电函数和寿命是理论和实验研究的主题。由于MnGaN是一种在常规电子学和低温电子学方面都有应用前景的半导体材料，因此也将对MnGaN的电子能带结构和性质进行研究。