Excitons of the structure and their application for design of electron devices

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This research proposal deals with the design of a new field effect transistor (FET) and the investigation of the properties of nitride semiconductors. The FET applies a new principle for formation of the channel conductivity based on tunnel injection of charges (electrons or holes) through a hetero-junction. These charges are a product of destroying of excitons of the structure located in the region of the hetero-junction. The proposed configuration includes a high resistance layer of GaN that acts as a FET channel. The hetero-junction is formed between this layer and an InGaN layer. The excitons of the structure are located within the InGaN. They are being destroyed if an electrical field of sufficient strength is applied on the GaN/InGaN hetero-structure. If the positive pole of the electrical field is connected to the FET-gate, the electrons of exciton origin penetrate into the GaN layer forming electron-type conductivity. If the negative pole is connected to the FET-gate, the holes of exciton origin penetrate into GaN forming a hole-type conductivity. In both cases the charge penetration is based on tunnel injection through a hetero-junction and the charges penetrate into the semiconductor with wider energy band gap (GaN). N-channel FET and p-channel FET are subjects of both design and technological performance. The objective of the project is to create a fast FET with potential application in both high frequency circuits and fast VLSI circuits based on nitride semiconductors. The dielectric function and the life-time of the excitons of the structure of several semiconductors related to InN are subjects of theoretical and experimental investigations according to the proposal. The electron band structure and the properties of MnGaN will be studied as well, because MnGaN is a promising semiconductor with application in both conventional and cryogenic electronics.