Design of molecular magnetoelectronic materials

分子磁电材料设计

• 批准号: 311740-2008
• 负责人: Frank, Natia
• 金额: $ 2.62万
• 依托单位: University of Victoria
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2010
• 资助国家: 加拿大
• 起止时间: 2010-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=457114
• 关键词: Design; molecular; magnetoelectronic; materials

Spintronics ("spin-based electronics" or magnetoelectronics) is an emergent technology that exploits both the charge and spin of an electron rather than utilizing charge as the sole basis for microelectronic devices. Spintronic devices are expected to be smaller, more versatile, and more robust than currently available silicon-based circuits. An emerging example is magnetic random access memory (MRAM) which is "non volatile" - no information is lost when the system power is turned off. A current estimate of the potential MRAM market is in excess of $100 billion annually. More distant applications exploit combinations of semiconductor, magnetic, and optical materials that may lead to ultra-fast switches, and "all spintronic" processors that would combine storage, processing, and communication on a single chip.

自旋电子学(自旋电子学或磁电子学)是一种新兴技术，它利用电子的电荷和自旋，而不是将电荷作为微电子设备的唯一基础。自旋电子器件预计将比目前可用的硅基电路更小、更多功能、更坚固。一个新出现的例子是磁随机存取存储器(MRAM)，它是非易失性的--当系统电源关闭时不会丢失任何信息。目前对潜在MRAM市场的估计是每年超过1000亿美元。更远的应用利用半导体、磁性和光学材料的组合，这可能导致超高速开关，以及将存储、处理和通信结合在单一芯片上的“全自旋”处理器。