Light switchable magnetic materials for nonvolatile memory applications: LI-RAM

与多核计算机架构相关的巨大能源需求以及未来10-15年云存储和计算需求的预期指数增长导致了“功率墙”，导致半导体行业对新的非易失性存储器技术的激烈研究。非易失性存储器（NVM）结合了高存储密度、快速随机存取和非易失性，从而允许跨存储器层级的多个层的集成，但具有减小的漏电流和较低的功率要求。最有前途的新兴非易失性存储器技术包括自旋转移矩随机存取存储器（STT-RAM）和相变随机存取存储器（PCRAM）。两者都表现出与SRAM相当的读/写速度和降低的功耗要求，但目前主要受到大单元尺寸的限制，这降低了芯片上每平方面积的存储器容量。

The enormous energy demands associated with multicore computer architectures and the expected exponential growth over the next 10-15 of cloud storage and computing needs has led to the "power wall", causing an intense search for new nonvolatile memory technologies within the semiconductor sector. Nonvolatile memory (NVM) combines high storage density, fast random access, and non-volatility allowing integration across multiple layers of the memory hierarchy but with decreased leakage current and lower power requirements. The most promising emergent nonvolatile memory technologies to date include spin-transfer torque random-access memory (STT-RAM), and phase-change random-access memory (PCRAM). Both exhibit comparable read/write speeds to SRAM and decreased power requirements, but are currently limited predominantly by large cell sizes, which decreases the memory capacity per square area on a chip.