Light switchable magnetic materials for nonvolatile memory applications: LI-RAM

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The enormous energy demands associated with multicore computer architectures and the expected exponential growth over the next 10-15 of cloud storage and computing needs has led to the "power wall", causing an intense search for new nonvolatile memory technologies within the semiconductor sector. Nonvolatile memory (NVM) combines high storage density, fast random access, and non-volatility allowing integration across multiple layers of the memory hierarchy but with decreased leakage current and lower power requirements. The most promising emergent nonvolatile memory technologies to date include spin-transfer torque random-access memory (STT-RAM), and phase-change random-access memory (PCRAM). Both exhibit comparable read/write speeds to SRAM and decreased power requirements, but are currently limited predominantly by large cell sizes, which decreases the memory capacity per square area on a chip.