III-V nitrides for advanced device applications

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III-V nitrides for advanced device applications. We seek to develop the fundamental science and technology necessary for an all-Australian nitride device capability for modern microwave applications. Significant advances in basic understanding of material properties will be made to meet critical technology needs. We will establish an innovative procedure for accurate analysis of oxygen and hydrogen in gallium nitride. Cathodoluminescence, Raman and absorption studies, combined with methods of elemental analysis will be used to resolve a wide range of technologically important problems such as the efficiency of doping, compensation and contact processing technologies in GaN.