Nanocavities in Si - Structural Evolution and Metal Gettering

Si结构演化与金属吸蚀中的纳米空泡。纳米空腔是减少硅微电子器件有源区金属污染的一种新方法。我们提出创新的实验，使用原位透射电子显微镜和基于同步加速器的x射线方法，以实现对控制纳米腔结构演变和金属杂质捕获的过程的基本理解。我们寻求开发一种可申请专利的技术，以提高杂质捕获效率，从而大大提高该工业相关工艺的适用性。

Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impurity trapping efficiency and thus dramatically increase the applicability of this industrially-relevant process.