Extremely low current measurements of semiconductor heterostructures and nanostructures at cryogenic temperatures

在低温下对半导体异质结构和纳米结构进行极低电流测量

• 批准号: 406609-2011
• 负责人: Mooney, Patricia
• 金额: $ 10.93万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Research Tools and Instruments - Category 1 (<$150,000)
• 财政年份: 2010
• 资助国家: 加拿大
• 起止时间: 2010-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=472519
• 关键词: Extremely; low; current; measurements; semiconductor

Crystalline semiconductors are the foundation of telecommunications, computing, and many other technologies employed in all aspects of contemporary life. Their physical characteristics are determined both by the properties of the host crystal and by the presence of impurities and crystalline defects. The identification and control of these defects determines the commercial viability of a given new material or structure. Combined with control of growth and processing factors, the influence of crystalline defects and impurities at surfaces, interfaces and in the bulk semiconductor can be distinguished and enhanced or eliminated. A new capability to make extremely sensitive electrical measurements at temperatures below 80K is needed to extend the energy range of carrier trapping experiments and also to investigate the effects of surfaces and interfaces on transport properties in novel nanostructures, including nanowires. We request funding to acquire a closed-cycle He cryostat for electrical measurements of a variety of semiconductors and nanostructures in the temperature range 4-300K. In addition, we propose to purchase an electrical measurement system capable of detecting electrical currents as low as 10 to the power -15 Amperes (1fA), required for studies of their electronic properties.

晶体半导体是当代生活各个方面采用的电信，计算和许多其他技术的基础。它们的身体特征既取决于宿主晶体的特性，也可以通过杂质和结晶缺陷的存在来确定。这些缺陷的识别和控制决定了给定的新材料或结构的商业生存能力。结合对生长和加工因子的控制，可以区分，增强或消除晶体缺陷和杂质在表面，界面和散装半导体中的影响。需要在低于80K的温度下进行极灵敏的电气测量的新能力，以扩大载流子捕获实验的能量范围，并研究表面和界面对包括纳米线在内的新型纳米结构中传输性能的影响。我们要求资金以获取一个闭合周期的低温恒温器，以进行4-300K温度范围内各种半导体和纳米结构的电测量。此外，我们建议购买能够检测到功率-15安培（1FA）的电流的电气测量系统，该电流是其电子性能研究所需的。