Understanding, characterizing and controlling semiconductor defects

了解、表征和控制半导体缺陷

• 批准号: 311687-2010
• 负责人: Mooney, Patricia
• 金额: $ 3.79万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2011
• 资助国家: 加拿大
• 起止时间: 2011-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=480953
• 关键词: Understanding; characterizing; controlling; semiconductor; defects

The properties of semiconductors are determined by the presence of impurities and defects. Defects control carrier concentration, mobility, lifetime, and recombination and are also responsible for processes involving atomic transport such as migration, diffusion, and precipitation of impurities and host atoms. The control of defects and impurities is the critical factor that enables a semiconductor to be engineered for applications in computing and telecommunications or for the more efficient use of energy. Our research program focuses primarily on studies of defects in emerging new semiconductors and on semiconductor materials and nanoscale structures where defects are known to limit the advancement of semiconductor technologies. This research on understanding and controlling semiconductor defects contributes to improved semiconductor devices for applications in computing, communications and the efficient use of energy.

半导体的特性取决于杂质和缺陷的存在。缺陷控制载体浓度，迁移率，寿命和重组，并且还负责涉及原子运输的过程，例如杂质和宿主原子的迁移，扩散和降水。缺陷和杂质的控制是使半导体能够在计算和电信中应用或更有效地使用能源的关键因素。我们的研究计划主要集中于新出现的半导体缺陷以及半导体材料和纳米级结构的研究，其中已知缺陷限制了半导体技术的进步。理解和控制半导体缺陷的这项研究有助于改进的半导体设备，用于在计算，通信和能源有效使用中应用。